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Article: Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts
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TitlePolarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts
 
AuthorsLi, L4
Jin, L2
Wang, J2
Smith, DJ4
Yin, WJ3
Yan, Y3
Sang, H2
Choy, WCH1
McCartney, MR4
 
Issue Date2012
 
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089
 
CitationAdvanced Materials, 2012, v. 24 n. 10, p. 1328-1332 [How to Cite?]
DOI: http://dx.doi.org/10.1002/adma.201103920
 
AbstractHomogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures. <Abstract from Wiley>
 
ISSN0935-9648
2012 Impact Factor: 14.829
2012 SCImago Journal Rankings: 7.178
 
DOIhttp://dx.doi.org/10.1002/adma.201103920
 
DC FieldValue
dc.contributor.authorLi, L
 
dc.contributor.authorJin, L
 
dc.contributor.authorWang, J
 
dc.contributor.authorSmith, DJ
 
dc.contributor.authorYin, WJ
 
dc.contributor.authorYan, Y
 
dc.contributor.authorSang, H
 
dc.contributor.authorChoy, WCH
 
dc.contributor.authorMcCartney, MR
 
dc.date.accessioned2012-09-20T07:54:51Z
 
dc.date.available2012-09-20T07:54:51Z
 
dc.date.issued2012
 
dc.description.abstractHomogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures. <Abstract from Wiley>
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationAdvanced Materials, 2012, v. 24 n. 10, p. 1328-1332 [How to Cite?]
DOI: http://dx.doi.org/10.1002/adma.201103920
 
dc.identifier.doihttp://dx.doi.org/10.1002/adma.201103920
 
dc.identifier.epage1332
 
dc.identifier.hkuros208018
 
dc.identifier.issn0935-9648
2012 Impact Factor: 14.829
2012 SCImago Journal Rankings: 7.178
 
dc.identifier.issue10
 
dc.identifier.pmid22298439
 
dc.identifier.scopuseid_2-s2.0-84863240512
 
dc.identifier.spage1328
 
dc.identifier.urihttp://hdl.handle.net/10722/164017
 
dc.identifier.volume24
 
dc.languageeng
 
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089
 
dc.publisher.placeGermany
 
dc.relation.ispartofAdvanced Materials
 
dc.subject.meshNanostructures - chemistry
 
dc.subject.meshSelenium Compounds - chemistry
 
dc.subject.meshSulfides - chemistry
 
dc.subject.meshZinc - chemistry
 
dc.subject.meshZinc Compounds - chemistry
 
dc.titlePolarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts
 
dc.typeArticle
 
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<item><contributor.author>Li, L</contributor.author>
<contributor.author>Jin, L</contributor.author>
<contributor.author>Wang, J</contributor.author>
<contributor.author>Smith, DJ</contributor.author>
<contributor.author>Yin, WJ</contributor.author>
<contributor.author>Yan, Y</contributor.author>
<contributor.author>Sang, H</contributor.author>
<contributor.author>Choy, WCH</contributor.author>
<contributor.author>McCartney, MR</contributor.author>
<date.accessioned>2012-09-20T07:54:51Z</date.accessioned>
<date.available>2012-09-20T07:54:51Z</date.available>
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<description.abstract>Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures. &lt;Abstract from Wiley&gt;</description.abstract>
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<subject.mesh>Nanostructures - chemistry</subject.mesh>
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Author Affiliations
  1. The University of Hong Kong
  2. Wuhan University
  3. National Renewable Energy Laboratory
  4. Arizona State University