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Article: Magneto-electric coupling in a multiferroic tunnel junction functioning as a magnetic-field-effect transistor

TitleMagneto-electric coupling in a multiferroic tunnel junction functioning as a magnetic-field-effect transistor
Authors
KeywordsGiant magnetoresistance (GMR)
magnetic-field-effect transistor (MFET)
spintronics devices
Issue Date2012
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7729
Citation
Ieee Transactions On Nanotechnology, 2012, v. 11 n. 1, p. 77-81 How to Cite?
AbstractA nanoscaled multilayered composite structure made of a ferroelectric tunnel capacitor attached to a magnetic sensor layer is studied using a Landau-Ginzburg thermodynamic model. The relation between the polarization and the mechanical load induced by the magnetic signal via electrostriction is established. Our results suggest that the spin-flip-induced resistance change of such a structure may reach hundreds of percents to orders of magnitude, which is sufficiently strong to allow its use as a magnetic-field-effect transistor. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/159801
ISSN
2015 Impact Factor: 1.702
2015 SCImago Journal Rankings: 0.708
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhou, Yen_HK
dc.contributor.authorWoo, CHen_HK
dc.contributor.authorZheng, Yen_HK
dc.date.accessioned2012-08-16T05:56:44Z-
dc.date.available2012-08-16T05:56:44Z-
dc.date.issued2012en_HK
dc.identifier.citationIeee Transactions On Nanotechnology, 2012, v. 11 n. 1, p. 77-81en_HK
dc.identifier.issn1536-125Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/159801-
dc.description.abstractA nanoscaled multilayered composite structure made of a ferroelectric tunnel capacitor attached to a magnetic sensor layer is studied using a Landau-Ginzburg thermodynamic model. The relation between the polarization and the mechanical load induced by the magnetic signal via electrostriction is established. Our results suggest that the spin-flip-induced resistance change of such a structure may reach hundreds of percents to orders of magnitude, which is sufficiently strong to allow its use as a magnetic-field-effect transistor. © 2011 IEEE.en_HK
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7729en_HK
dc.relation.ispartofIEEE Transactions on Nanotechnologyen_HK
dc.subjectGiant magnetoresistance (GMR)en_HK
dc.subjectmagnetic-field-effect transistor (MFET)en_HK
dc.subjectspintronics devicesen_HK
dc.titleMagneto-electric coupling in a multiferroic tunnel junction functioning as a magnetic-field-effect transistoren_HK
dc.typeArticleen_HK
dc.identifier.emailZhou, Y: yanzhou@hku.hken_HK
dc.identifier.authorityZhou, Y=rp01541en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/TNANO.2011.2157355en_HK
dc.identifier.scopuseid_2-s2.0-84862968700en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84862968700&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume11en_HK
dc.identifier.issue1en_HK
dc.identifier.spage77en_HK
dc.identifier.epage81en_HK
dc.identifier.isiWOS:000298998400012-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhou, Y=51360911500en_HK
dc.identifier.scopusauthoridWoo, CH=55264432200en_HK
dc.identifier.scopusauthoridZheng, Y=24823556300en_HK

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