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Article: Electrical properties of ZnO nanorods studied by conductive atomic force microscopy

TitleElectrical properties of ZnO nanorods studied by conductive atomic force microscopy
Authors
KeywordsConductive atomic force microscopy
Contact-mode afm
Current-voltage characterization
Electrical and optical properties
Electrical characterization
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 110 n. 5 How to Cite?
AbstractZnO nanostructures are promising candidates for the development of novel electronic devices due to their unique electrical and optical properties. Here, we present a complementary electrical characterization of individual upright standing and lying ZnO nanorods using conductive atomic force microscopy (C-AFM). Initially, the electrical properties of the arrays of upright standing ZnO NRs were characterized using two-dimensional current maps. The current maps were recorded simultaneously with the topography acquired by contact mode AFM. Further, C-AFM was utilized to determine the local current-voltage (I-V) characteristics of the top and side facets of individual upright standing NRs. Current-voltage characterization revealed a characteristic similar to that of a Schottky diode. Detailed discussion of the electrical properties is based on local I-V curves, as well as on the 2D current maps recorded from specific areas. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/159800
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorBeinik, Ien_HK
dc.contributor.authorKratzer, Men_HK
dc.contributor.authorWachauer, Aen_HK
dc.contributor.authorWang, Len_HK
dc.contributor.authorLechner, RTen_HK
dc.contributor.authorTeichert, Cen_HK
dc.contributor.authorMotz, Cen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorChen, XYen_HK
dc.contributor.authorHsu, XYen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.date.accessioned2012-08-16T05:56:43Z-
dc.date.available2012-08-16T05:56:43Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 5en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/159800-
dc.description.abstractZnO nanostructures are promising candidates for the development of novel electronic devices due to their unique electrical and optical properties. Here, we present a complementary electrical characterization of individual upright standing and lying ZnO nanorods using conductive atomic force microscopy (C-AFM). Initially, the electrical properties of the arrays of upright standing ZnO NRs were characterized using two-dimensional current maps. The current maps were recorded simultaneously with the topography acquired by contact mode AFM. Further, C-AFM was utilized to determine the local current-voltage (I-V) characteristics of the top and side facets of individual upright standing NRs. Current-voltage characterization revealed a characteristic similar to that of a Schottky diode. Detailed discussion of the electrical properties is based on local I-V curves, as well as on the 2D current maps recorded from specific areas. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 5, article no. 052005) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i5/p052005_s1).en_US
dc.subjectConductive atomic force microscopy-
dc.subjectContact-mode afm-
dc.subjectCurrent-voltage characterization-
dc.subjectElectrical and optical properties-
dc.subjectElectrical characterization-
dc.titleElectrical properties of ZnO nanorods studied by conductive atomic force microscopyen_HK
dc.typeArticleen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3623764en_HK
dc.identifier.scopuseid_2-s2.0-80052934399en_HK
dc.identifier.hkuros205702en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80052934399&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue5en_HK
dc.identifier.isiWOS:000294968600006-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridBeinik, I=26040452000en_HK
dc.identifier.scopusauthoridKratzer, M=16029145300en_HK
dc.identifier.scopusauthoridWachauer, A=52464788200en_HK
dc.identifier.scopusauthoridWang, L=52464687400en_HK
dc.identifier.scopusauthoridLechner, RT=7005232235en_HK
dc.identifier.scopusauthoridTeichert, C=7003900900en_HK
dc.identifier.scopusauthoridMotz, C=8955314100en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridChen, XY=35182594600en_HK
dc.identifier.scopusauthoridHsu, XY=52463861900en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK

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