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Article: Pseudo-spin-valve with L 10 (111)-oriented FePt fixed layer
Title | Pseudo-spin-valve with L 10 (111)-oriented FePt fixed layer |
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Authors | |
Issue Date | 2009 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2009, v. 105 n. 7, article no. 07E910 How to Cite? |
Abstract | Recently we proposed a spin torque oscillator where the fixed layer has its magnetization easy-axis tilted with respect to the film plane to simultaneously achieve zero-field operation and high output power [Y. Zhou, C. L. Zha, S. Bonetti, J. Persson, and J. Åkerman, Appl. Phys. Lett. 92, 262508 (2008)]. Here we take the first step toward the realization of this device and fabricate successfully a pseudo-spin-valve using an L 10 (111)-oriented FePt fixed layer with tilted magnetocrystalline anisotropy. A total magnetoresistance (MR) of 0.86% is experimentally observed for the standard pseudo-spin-valve of the L 10 FePt/Cu/NiFe structure in applied fields up to 1.5 T. While part of the MR may originate from the FePt film alone, the dominating part of MR correlates with switching of the NiFe free layer. © 2009 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/159780 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Zha, CL | en_HK |
dc.contributor.author | Bonetti, S | en_HK |
dc.contributor.author | Persson, J | en_HK |
dc.contributor.author | Zhou, Y | en_HK |
dc.contributor.author | Åkerman, J | en_HK |
dc.date.accessioned | 2012-08-16T05:56:34Z | - |
dc.date.available | 2012-08-16T05:56:34Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 2009, v. 105 n. 7, article no. 07E910 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/159780 | - |
dc.description.abstract | Recently we proposed a spin torque oscillator where the fixed layer has its magnetization easy-axis tilted with respect to the film plane to simultaneously achieve zero-field operation and high output power [Y. Zhou, C. L. Zha, S. Bonetti, J. Persson, and J. Åkerman, Appl. Phys. Lett. 92, 262508 (2008)]. Here we take the first step toward the realization of this device and fabricate successfully a pseudo-spin-valve using an L 10 (111)-oriented FePt fixed layer with tilted magnetocrystalline anisotropy. A total magnetoresistance (MR) of 0.86% is experimentally observed for the standard pseudo-spin-valve of the L 10 FePt/Cu/NiFe structure in applied fields up to 1.5 T. While part of the MR may originate from the FePt film alone, the dominating part of MR correlates with switching of the NiFe free layer. © 2009 American Institute of Physics. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.title | Pseudo-spin-valve with L 10 (111)-oriented FePt fixed layer | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Zhou, Y: yanzhou@hku.hk | en_HK |
dc.identifier.authority | Zhou, Y=rp01541 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.3072880 | en_HK |
dc.identifier.scopus | eid_2-s2.0-65249137171 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-65249137171&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 105 | en_HK |
dc.identifier.issue | 7 | en_HK |
dc.identifier.spage | article no. 07E910 | - |
dc.identifier.epage | article no. 07E910 | - |
dc.identifier.isi | WOS:000266633500735 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Zha, CL=12645295100 | en_HK |
dc.identifier.scopusauthorid | Bonetti, S=23972463400 | en_HK |
dc.identifier.scopusauthorid | Persson, J=25031767000 | en_HK |
dc.identifier.scopusauthorid | Zhou, Y=51360911500 | en_HK |
dc.identifier.scopusauthorid | Åkerman, J=7003585708 | en_HK |
dc.identifier.issnl | 0021-8979 | - |