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Article: Pseudo-spin-valve with L 10 (111)-oriented FePt fixed layer

TitlePseudo-spin-valve with L 10 (111)-oriented FePt fixed layer
Authors
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2009, v. 105 n. 7 How to Cite?
AbstractRecently we proposed a spin torque oscillator where the fixed layer has its magnetization easy-axis tilted with respect to the film plane to simultaneously achieve zero-field operation and high output power [Y. Zhou, C. L. Zha, S. Bonetti, J. Persson, and J. Åkerman, Appl. Phys. Lett. 92, 262508 (2008)]. Here we take the first step toward the realization of this device and fabricate successfully a pseudo-spin-valve using an L 10 (111)-oriented FePt fixed layer with tilted magnetocrystalline anisotropy. A total magnetoresistance (MR) of 0.86% is experimentally observed for the standard pseudo-spin-valve of the L 10 FePt/Cu/NiFe structure in applied fields up to 1.5 T. While part of the MR may originate from the FePt film alone, the dominating part of MR correlates with switching of the NiFe free layer. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/159780
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZha, CLen_HK
dc.contributor.authorBonetti, Sen_HK
dc.contributor.authorPersson, Jen_HK
dc.contributor.authorZhou, Yen_HK
dc.contributor.authorÅkerman, Jen_HK
dc.date.accessioned2012-08-16T05:56:34Z-
dc.date.available2012-08-16T05:56:34Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of Applied Physics, 2009, v. 105 n. 7en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/159780-
dc.description.abstractRecently we proposed a spin torque oscillator where the fixed layer has its magnetization easy-axis tilted with respect to the film plane to simultaneously achieve zero-field operation and high output power [Y. Zhou, C. L. Zha, S. Bonetti, J. Persson, and J. Åkerman, Appl. Phys. Lett. 92, 262508 (2008)]. Here we take the first step toward the realization of this device and fabricate successfully a pseudo-spin-valve using an L 10 (111)-oriented FePt fixed layer with tilted magnetocrystalline anisotropy. A total magnetoresistance (MR) of 0.86% is experimentally observed for the standard pseudo-spin-valve of the L 10 FePt/Cu/NiFe structure in applied fields up to 1.5 T. While part of the MR may originate from the FePt film alone, the dominating part of MR correlates with switching of the NiFe free layer. © 2009 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.titlePseudo-spin-valve with L 10 (111)-oriented FePt fixed layeren_HK
dc.typeArticleen_HK
dc.identifier.emailZhou, Y: yanzhou@hku.hken_HK
dc.identifier.authorityZhou, Y=rp01541en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3072880en_HK
dc.identifier.scopuseid_2-s2.0-65249137171en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-65249137171&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume105en_HK
dc.identifier.issue7en_HK
dc.identifier.isiWOS:000266633500735-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZha, CL=12645295100en_HK
dc.identifier.scopusauthoridBonetti, S=23972463400en_HK
dc.identifier.scopusauthoridPersson, J=25031767000en_HK
dc.identifier.scopusauthoridZhou, Y=51360911500en_HK
dc.identifier.scopusauthoridÅkerman, J=7003585708en_HK

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