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Article: A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator
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TitleA study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator
 
AuthorsChen, G1
Yu, J1
Lai, PT1
 
KeywordsBarrier heights
Conduction mechanism
Fowler-nordheim tunneling
Gate insulator
Hydrogen gas
 
Issue Date2012
 
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
 
CitationMicroelectronics Reliability, 2012, v. 52 n. 8, p. 1660-1664 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.microrel.2012.03.022
 
AbstractIn this work, a Metal-Insulator-Semiconductor (MIS) based Schottky-diode hydrogen sensor was fabricated with La 2O 3 as a gate insulator. The electrical properties (current-voltage characteristics, change in barrier height and sensitivity) and hydrogen sensing performance (dynamic response and response time) were examined from 25°C to 300°C and towards H 2 with different concentrations. The conduction mechanisms were explained in terms of Fowler-Nordheim tunneling (below 120°C) and the Poole-Frenkel effect at temperatures (above 120°C). The results show that at an operating temperature of 260°C, the sensitivity of the device can reach a maximum value of 4.6 with respect to 10,000-ppm hydrogen gas and its response time was 20 s. © 2012 Elsevier Ltd. All rights reserved.
 
ISSN0026-2714
2013 Impact Factor: 1.214
2013 SCImago Journal Rankings: 0.631
 
DOIhttp://dx.doi.org/10.1016/j.microrel.2012.03.022
 
DC FieldValue
dc.contributor.authorChen, G
 
dc.contributor.authorYu, J
 
dc.contributor.authorLai, PT
 
dc.date.accessioned2012-08-16T05:51:36Z
 
dc.date.available2012-08-16T05:51:36Z
 
dc.date.issued2012
 
dc.description.abstractIn this work, a Metal-Insulator-Semiconductor (MIS) based Schottky-diode hydrogen sensor was fabricated with La 2O 3 as a gate insulator. The electrical properties (current-voltage characteristics, change in barrier height and sensitivity) and hydrogen sensing performance (dynamic response and response time) were examined from 25°C to 300°C and towards H 2 with different concentrations. The conduction mechanisms were explained in terms of Fowler-Nordheim tunneling (below 120°C) and the Poole-Frenkel effect at temperatures (above 120°C). The results show that at an operating temperature of 260°C, the sensitivity of the device can reach a maximum value of 4.6 with respect to 10,000-ppm hydrogen gas and its response time was 20 s. © 2012 Elsevier Ltd. All rights reserved.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationMicroelectronics Reliability, 2012, v. 52 n. 8, p. 1660-1664 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.microrel.2012.03.022
 
dc.identifier.citeulike10595535
 
dc.identifier.doihttp://dx.doi.org/10.1016/j.microrel.2012.03.022
 
dc.identifier.epage1664
 
dc.identifier.hkuros205479
 
dc.identifier.issn0026-2714
2013 Impact Factor: 1.214
2013 SCImago Journal Rankings: 0.631
 
dc.identifier.issue8
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-84863722855
 
dc.identifier.spage1660
 
dc.identifier.urihttp://hdl.handle.net/10722/159537
 
dc.identifier.volume52
 
dc.languageeng
 
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofMicroelectronics Reliability
 
dc.subjectBarrier heights
 
dc.subjectConduction mechanism
 
dc.subjectFowler-nordheim tunneling
 
dc.subjectGate insulator
 
dc.subjectHydrogen gas
 
dc.titleA study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Chen, G</contributor.author>
<contributor.author>Yu, J</contributor.author>
<contributor.author>Lai, PT</contributor.author>
<date.accessioned>2012-08-16T05:51:36Z</date.accessioned>
<date.available>2012-08-16T05:51:36Z</date.available>
<date.issued>2012</date.issued>
<identifier.citation>Microelectronics Reliability, 2012, v. 52 n. 8, p. 1660-1664</identifier.citation>
<identifier.issn>0026-2714</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/159537</identifier.uri>
<description.abstract>In this work, a Metal-Insulator-Semiconductor (MIS) based Schottky-diode hydrogen sensor was fabricated with La 2O 3 as a gate insulator. The electrical properties (current-voltage characteristics, change in barrier height and sensitivity) and hydrogen sensing performance (dynamic response and response time) were examined from 25&#176;C to 300&#176;C and towards H 2 with different concentrations. The conduction mechanisms were explained in terms of Fowler-Nordheim tunneling (below 120&#176;C) and the Poole-Frenkel effect at temperatures (above 120&#176;C). The results show that at an operating temperature of 260&#176;C, the sensitivity of the device can reach a maximum value of 4.6 with respect to 10,000-ppm hydrogen gas and its response time was 20 s. &#169; 2012 Elsevier Ltd. All rights reserved.</description.abstract>
<language>eng</language>
<publisher>Pergamon. The Journal&apos;s web site is located at http://www.elsevier.com/locate/microrel</publisher>
<relation.ispartof>Microelectronics Reliability</relation.ispartof>
<subject>Barrier heights</subject>
<subject>Conduction mechanism</subject>
<subject>Fowler-nordheim tunneling</subject>
<subject>Gate insulator</subject>
<subject>Hydrogen gas</subject>
<title>A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator</title>
<type>Article</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=0026-2714&amp;volume=52&amp;issue=8&amp;spage=1660&amp;epage=1664&amp;date=2012&amp;atitle=A+study+on+MIS+Schottky+diode+based+hydrogen+sensor+using+La2O3+as+gate+insulator</identifier.openurl>
<description.nature>link_to_subscribed_fulltext</description.nature>
<identifier.doi>10.1016/j.microrel.2012.03.022</identifier.doi>
<identifier.scopus>eid_2-s2.0-84863722855</identifier.scopus>
<identifier.hkuros>205479</identifier.hkuros>
<identifier.volume>52</identifier.volume>
<identifier.issue>8</identifier.issue>
<identifier.spage>1660</identifier.spage>
<identifier.epage>1664</identifier.epage>
<publisher.place>United Kingdom</publisher.place>
<identifier.citeulike>10595535</identifier.citeulike>
</item>
Author Affiliations
  1. The University of Hong Kong