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Article: A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator

TitleA study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator
Authors
Chen, GYu, JLai, PT
KeywordsBarrier heights
Conduction mechanism
Fowler-nordheim tunneling
Gate insulator
Hydrogen gas
Issue Date2012
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2012, v. 52 n. 8, p. 1660-1664 How to Cite?
DOI: http://dx.doi.org/10.1016/j.microrel.2012.03.022
AbstractIn this work, a Metal-Insulator-Semiconductor (MIS) based Schottky-diode hydrogen sensor was fabricated with La 2O 3 as a gate insulator. The electrical properties (current-voltage characteristics, change in barrier height and sensitivity) and hydrogen sensing performance (dynamic response and response time) were examined from 25°C to 300°C and towards H 2 with different concentrations. The conduction mechanisms were explained in terms of Fowler-Nordheim tunneling (below 120°C) and the Poole-Frenkel effect at temperatures (above 120°C). The results show that at an operating temperature of 260°C, the sensitivity of the device can reach a maximum value of 4.6 with respect to 10,000-ppm hydrogen gas and its response time was 20 s. © 2012 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/159537
ISSN
0026-2714
2023 Impact Factor: 1.6
2023 SCImago Journal Rankings: 0.394
ISI Accession Number ID
WOS:000307142900027

 

DC FieldValueLanguage
dc.contributor.authorChen, Gen_US
dc.contributor.authorYu, Jen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-16T05:51:36Z-
dc.date.available2012-08-16T05:51:36Z-
dc.date.issued2012en_US
dc.identifier.citationMicroelectronics Reliability, 2012, v. 52 n. 8, p. 1660-1664en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://hdl.handle.net/10722/159537-
dc.description.abstractIn this work, a Metal-Insulator-Semiconductor (MIS) based Schottky-diode hydrogen sensor was fabricated with La 2O 3 as a gate insulator. The electrical properties (current-voltage characteristics, change in barrier height and sensitivity) and hydrogen sensing performance (dynamic response and response time) were examined from 25°C to 300°C and towards H 2 with different concentrations. The conduction mechanisms were explained in terms of Fowler-Nordheim tunneling (below 120°C) and the Poole-Frenkel effect at temperatures (above 120°C). The results show that at an operating temperature of 260°C, the sensitivity of the device can reach a maximum value of 4.6 with respect to 10,000-ppm hydrogen gas and its response time was 20 s. © 2012 Elsevier Ltd. All rights reserved.-
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel-
dc.relation.ispartofMicroelectronics Reliabilityen_US
dc.subjectBarrier heights-
dc.subjectConduction mechanism-
dc.subjectFowler-nordheim tunneling-
dc.subjectGate insulator-
dc.subjectHydrogen gas-
dc.titleA study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulatoren_US
dc.typeArticleen_US
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0026-2714&volume=52&issue=8&spage=1660&epage=1664&date=2012&atitle=A+study+on+MIS+Schottky+diode+based+hydrogen+sensor+using+La2O3+as+gate+insulatoren_US
dc.identifier.emailYu, J: jcwyu@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.microrel.2012.03.022-
dc.identifier.scopuseid_2-s2.0-84863722855-
dc.identifier.hkuros205479en_US
dc.identifier.volume52en_US
dc.identifier.issue8en_US
dc.identifier.spage1660en_US
dc.identifier.epage1664en_US
dc.identifier.isiWOS:000307142900027-
dc.publisher.placeUnited Kingdom-
dc.identifier.scopusauthoridChen, G=35777710500-
dc.identifier.scopusauthoridYu, J=55184629700-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.citeulike10595535-
dc.identifier.issnl0026-2714-

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