Article: A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator

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TitleA study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator
AuthorsChen, G1
Yu, J1
Lai, PT1
KeywordsBarrier heights
Conduction mechanism
Fowler-nordheim tunneling
Gate insulator
Hydrogen gas
Issue Date2012
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
CitationMicroelectronics Reliability, 2012, v. 52 n. 8, p. 1660-1664 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.microrel.2012.03.022
AbstractIn this work, a Metal-Insulator-Semiconductor (MIS) based Schottky-diode hydrogen sensor was fabricated with La 2O 3 as a gate insulator. The electrical properties (current-voltage characteristics, change in barrier height and sensitivity) and hydrogen sensing performance (dynamic response and response time) were examined from 25°C to 300°C and towards H 2 with different concentrations. The conduction mechanisms were explained in terms of Fowler-Nordheim tunneling (below 120°C) and the Poole-Frenkel effect at temperatures (above 120°C). The results show that at an operating temperature of 260°C, the sensitivity of the device can reach a maximum value of 4.6 with respect to 10,000-ppm hydrogen gas and its response time was 20 s. © 2012 Elsevier Ltd. All rights reserved.
ISSN0026-2714
2011 Impact Factor: 1.167
2011 SCImago Journal Rankings: 0.090
DOIhttp://dx.doi.org/10.1016/j.microrel.2012.03.022
DC Field
Value
dc.contributor.authorChen, G
dc.contributor.authorYu, J
dc.contributor.authorLai, PT
dc.date.accessioned2012-08-16T05:51:36Z
dc.date.available2012-08-16T05:51:36Z
dc.date.issued2012
dc.description.abstractIn this work, a Metal-Insulator-Semiconductor (MIS) based Schottky-diode hydrogen sensor was fabricated with La 2O 3 as a gate insulator. The electrical properties (current-voltage characteristics, change in barrier height and sensitivity) and hydrogen sensing performance (dynamic response and response time) were examined from 25°C to 300°C and towards H 2 with different concentrations. The conduction mechanisms were explained in terms of Fowler-Nordheim tunneling (below 120°C) and the Poole-Frenkel effect at temperatures (above 120°C). The results show that at an operating temperature of 260°C, the sensitivity of the device can reach a maximum value of 4.6 with respect to 10,000-ppm hydrogen gas and its response time was 20 s. © 2012 Elsevier Ltd. All rights reserved.
dc.description.naturelink_to_subscribed_fulltext
dc.identifier.citationMicroelectronics Reliability, 2012, v. 52 n. 8, p. 1660-1664 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.microrel.2012.03.022
dc.identifier.citeulike10595535
dc.identifier.doihttp://dx.doi.org/10.1016/j.microrel.2012.03.022
dc.identifier.epage1664
dc.identifier.hkuros205479
dc.identifier.issn0026-2714
2011 Impact Factor: 1.167
2011 SCImago Journal Rankings: 0.090
dc.identifier.issue8
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-84863722855
dc.identifier.spage1660
dc.identifier.urihttp://hdl.handle.net/10722/159537
dc.identifier.volume52
dc.languageeng
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
dc.publisher.placeUnited Kingdom
dc.relation.ispartofMicroelectronics Reliability
dc.subjectBarrier heights
dc.subjectConduction mechanism
dc.subjectFowler-nordheim tunneling
dc.subjectGate insulator
dc.subjectHydrogen gas
dc.titleA study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong