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Conference Paper: Analytical and structural investigations of the metal - Enhanced oxidation of SiC - MOS structures

TitleAnalytical and structural investigations of the metal - Enhanced oxidation of SiC - MOS structures
Authors
Issue Date2008
Citation
Ecs Transactions, 2008, v. 13 n. 3, p. 99-109 How to Cite?
AbstractThe purpose of this work is to study the chemical and structural variations across the MEO SiO 2/4H-SiC interfaces in order to compare results with standard thermally oxidized and NO annealed samples, and correlate these process variations with the improved mobility of the SiC MOS devices. The MEO SiC-MOS structures were studied via X-ray Photo-Electron Spectroscopy (XPS), EELS and TEM. Both XPS and EELS analyses indicate that the major elements C, Si and O go through changes of their chemical states in the interface transition regions from SiC to SiO 2. Structural characterization with TEM reveal contrast changes at the near interface regions that indicate local chemical and/or stoichiometric variations, but no structural degradation or amorphization of the top few atomic SiC layers. XPS depth profile studies suggest that these changes have occurred up to ∼ 200 nanometers deep down into the SiC substrate. ©The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/158993
ISSN
2015 SCImago Journal Rankings: 0.212
References

 

DC FieldValueLanguage
dc.contributor.authorLee, Uen_US
dc.contributor.authorZheleva, Ten_US
dc.contributor.authorLelis, Aen_US
dc.contributor.authorDuscher, Gen_US
dc.contributor.authorLiu, Fen_US
dc.contributor.authorDas, Men_US
dc.contributor.authorScofield, Jen_US
dc.date.accessioned2012-08-08T09:05:00Z-
dc.date.available2012-08-08T09:05:00Z-
dc.date.issued2008en_US
dc.identifier.citationEcs Transactions, 2008, v. 13 n. 3, p. 99-109en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/10722/158993-
dc.description.abstractThe purpose of this work is to study the chemical and structural variations across the MEO SiO 2/4H-SiC interfaces in order to compare results with standard thermally oxidized and NO annealed samples, and correlate these process variations with the improved mobility of the SiC MOS devices. The MEO SiC-MOS structures were studied via X-ray Photo-Electron Spectroscopy (XPS), EELS and TEM. Both XPS and EELS analyses indicate that the major elements C, Si and O go through changes of their chemical states in the interface transition regions from SiC to SiO 2. Structural characterization with TEM reveal contrast changes at the near interface regions that indicate local chemical and/or stoichiometric variations, but no structural degradation or amorphization of the top few atomic SiC layers. XPS depth profile studies suggest that these changes have occurred up to ∼ 200 nanometers deep down into the SiC substrate. ©The Electrochemical Society.en_US
dc.languageengen_US
dc.relation.ispartofECS Transactionsen_US
dc.titleAnalytical and structural investigations of the metal - Enhanced oxidation of SiC - MOS structuresen_US
dc.typeConference_Paperen_US
dc.identifier.emailLiu, F:fordliu@hku.hken_US
dc.identifier.authorityLiu, F=rp01358en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1149/1.2913085en_US
dc.identifier.scopuseid_2-s2.0-55949119883en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-55949119883&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume13en_US
dc.identifier.issue3en_US
dc.identifier.spage99en_US
dc.identifier.epage109en_US
dc.identifier.scopusauthoridLee, U=7102225120en_US
dc.identifier.scopusauthoridZheleva, T=7005345636en_US
dc.identifier.scopusauthoridLelis, A=6603726958en_US
dc.identifier.scopusauthoridDuscher, G=7006023463en_US
dc.identifier.scopusauthoridLiu, F=11038795100en_US
dc.identifier.scopusauthoridDas, M=7402050794en_US
dc.identifier.scopusauthoridScofield, J=8449801500en_US

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