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Conference Paper: High performance self-organized in(Ga)As quantum dot lasers monolithically grown on silicon

TitleHigh performance self-organized in(Ga)As quantum dot lasers monolithically grown on silicon
Authors
KeywordsHeteroepitaxy
Monolithic Integration
Optical Intetconnect
Quantum Dot
Semiconductor Laser
Silicon Photonics
Issue Date2006
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2006, v. 6125 How to Cite?
AbstractWe have investigated the molecular beam epitaxial growth and characteristics of self-organized InGaAs quantum dot lasers grown directly on silicon utilizing thin (≤ 2 μm) GaAs buffer layers and quantum dot layers as dislocation filters. Both the photoluminescence intensity and linewidth from quantum dots grown on silicon are comparable to those from similar dots grown on GaAs substrates. Cross-sectional transmission electron microscopy studies indicate that defect-free quantum dots and low defect density quantum dot active regions can be achieved. The best devices are characterized by relatively low threshold current (Jth ∼ 900 A/cm2), high output power (> 150 mW), large characteristic temperature (T0 = 244 K) and constant output slope efficiency (≥ 0.3 W/A) in the temperature range of 5 to 95°C.
Persistent Identifierhttp://hdl.handle.net/10722/158961
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorMi, Zen_US
dc.contributor.authorYang, Jen_US
dc.contributor.authorBhattacharya, Pen_US
dc.contributor.authorChan, PKLen_US
dc.contributor.authorPipe, KPen_US
dc.date.accessioned2012-08-08T09:04:48Z-
dc.date.available2012-08-08T09:04:48Z-
dc.date.issued2006en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2006, v. 6125en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/158961-
dc.description.abstractWe have investigated the molecular beam epitaxial growth and characteristics of self-organized InGaAs quantum dot lasers grown directly on silicon utilizing thin (≤ 2 μm) GaAs buffer layers and quantum dot layers as dislocation filters. Both the photoluminescence intensity and linewidth from quantum dots grown on silicon are comparable to those from similar dots grown on GaAs substrates. Cross-sectional transmission electron microscopy studies indicate that defect-free quantum dots and low defect density quantum dot active regions can be achieved. The best devices are characterized by relatively low threshold current (Jth ∼ 900 A/cm2), high output power (> 150 mW), large characteristic temperature (T0 = 244 K) and constant output slope efficiency (≥ 0.3 W/A) in the temperature range of 5 to 95°C.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.subjectHeteroepitaxyen_US
dc.subjectMonolithic Integrationen_US
dc.subjectOptical Intetconnecten_US
dc.subjectQuantum Doten_US
dc.subjectSemiconductor Laseren_US
dc.subjectSilicon Photonicsen_US
dc.titleHigh performance self-organized in(Ga)As quantum dot lasers monolithically grown on siliconen_US
dc.typeConference_Paperen_US
dc.identifier.emailChan, PKL:pklc@hku.hken_US
dc.identifier.authorityChan, PKL=rp01532en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.644289en_US
dc.identifier.scopuseid_2-s2.0-33646745708en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33646745708&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume6125en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMi, Z=13606588200en_US
dc.identifier.scopusauthoridYang, J=9733149000en_US
dc.identifier.scopusauthoridBhattacharya, P=7202370444en_US
dc.identifier.scopusauthoridChan, PKL=35742829700en_US
dc.identifier.scopusauthoridPipe, KP=6603768450en_US

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