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Conference Paper: Efficient variation-aware EM-semiconductor coupled solver for the TSV structures in 3D IC

TitleEfficient variation-aware EM-semiconductor coupled solver for the TSV structures in 3D IC
Authors
Issue Date2012
PublisherIEEE Computer Society. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000198
Citation
The 2012 Conference and Exhibition on Design, Automation and Test in Europe (DATE12), Dresden, Germany, 12-16 March 2012. In Design, Automation, and Test in Europe Conference and Exhibition Proceedings, 2012, p. 1409-1412 How to Cite?
AbstractIn this paper, we present a variational electromagnetic-semiconductor coupled solver to assess the impacts of process variations on the 3D integrated circuit (3D IC) on-chip structures. The solver employs the finite volume method (FVM) to handle a system of equation considering both the full-wave electromagnetic effects and semiconductor effects. With a smart geometrical variation model for the FVM discretization, the solver is able to handle both small-size or large-size variations. Moreover, a weighted principle factor analysis (wPFA) technique is presented to reduce the random variables in both electromagnetic and semiconductor regions, and the spectral stochastic collocation method (SSCM) [10] is used to generate the quadratic statistical model. Numerical results validate the accuracy and efficiency of this solver in dealing with process variations in hybrid material through-silicon via (TSV) structures. © 2012 EDAA.
Persistent Identifierhttp://hdl.handle.net/10722/158796
ISBN
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorXu, Yen_HK
dc.contributor.authorYu, Wen_HK
dc.contributor.authorChen, Qen_HK
dc.contributor.authorJiang, Len_HK
dc.contributor.authorWong, Nen_HK
dc.date.accessioned2012-08-08T09:01:23Z-
dc.date.available2012-08-08T09:01:23Z-
dc.date.issued2012en_HK
dc.identifier.citationThe 2012 Conference and Exhibition on Design, Automation and Test in Europe (DATE12), Dresden, Germany, 12-16 March 2012. In Design, Automation, and Test in Europe Conference and Exhibition Proceedings, 2012, p. 1409-1412en_US
dc.identifier.isbn978-3-9810801-8-6-
dc.identifier.issn1530-1591en_HK
dc.identifier.urihttp://hdl.handle.net/10722/158796-
dc.description.abstractIn this paper, we present a variational electromagnetic-semiconductor coupled solver to assess the impacts of process variations on the 3D integrated circuit (3D IC) on-chip structures. The solver employs the finite volume method (FVM) to handle a system of equation considering both the full-wave electromagnetic effects and semiconductor effects. With a smart geometrical variation model for the FVM discretization, the solver is able to handle both small-size or large-size variations. Moreover, a weighted principle factor analysis (wPFA) technique is presented to reduce the random variables in both electromagnetic and semiconductor regions, and the spectral stochastic collocation method (SSCM) [10] is used to generate the quadratic statistical model. Numerical results validate the accuracy and efficiency of this solver in dealing with process variations in hybrid material through-silicon via (TSV) structures. © 2012 EDAA.en_HK
dc.languageengen_US
dc.publisherIEEE Computer Society. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000198-
dc.relation.ispartofDesign, Automation, and Test in Europe Conference and Exhibition Proceedingsen_HK
dc.rightsDesign, Automation, and Test in Europe Conference and Exhibition Proceedings. Copyright © IEEE Computer Society.-
dc.rights©2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleEfficient variation-aware EM-semiconductor coupled solver for the TSV structures in 3D ICen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailXu, Y: yzxu@eee.hku.hken_HK
dc.identifier.emailYu, W: yu-wj@tsinghua.edu.cnen_HK
dc.identifier.emailChen, Q: q1chen@hku.hken_HK
dc.identifier.emailJiang, L: jianglj@hku.hk-
dc.identifier.emailWong, N: nwong@eee.hku.hk-
dc.identifier.authorityChen, Q=rp01688en_HK
dc.identifier.authorityJiang, L=rp01338en_HK
dc.identifier.authorityWong, N=rp00190en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.scopuseid_2-s2.0-84862094848en_HK
dc.identifier.hkuros209147-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84862094848&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage1409en_HK
dc.identifier.epage1412en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWong, N=35235551600en_HK
dc.identifier.scopusauthoridJiang, L=36077777200en_HK
dc.identifier.scopusauthoridChen, Q=18133382800en_HK
dc.identifier.scopusauthoridYu, W=7403913900en_HK
dc.identifier.scopusauthoridXu, Y=44662080000en_HK
dc.customcontrol.immutablesml 130510-

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