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Conference Paper: Vertical integration of light-emitting diode chips

TitleVertical integration of light-emitting diode chips
Authors
Choi, HW
KeywordsChip-Stacking
Laser-Micromachining
Led
Issue Date2011
Citation
2011 IEEE International Conference Of Electron Devices And Solid-State Circuits (EDSSC 2011), Tianjin, China, 17-18 November 2011 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2011.6117561
AbstractA novel design and method for assembling a tri-color light-emitting diode (LED) device is proposed and demonstrated. LED chips of the primary colors are physically and tightly stacked on top of each other, enabled by laser-micromachined trenches on the backside of chips. Light emitted from each layer of the stack passes through each other, and thus is mixed naturally without additional optics. As a color-tunable device, a wide range of colors can be generated, making it suitable for display purposes. As a phosphor-free white light LED, both high luminous efficacy and CRI was achieved. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158772
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2012-08-08T09:01:15Z-
dc.date.available2012-08-08T09:01:15Z-
dc.date.issued2011en_US
dc.identifier.citation2011 IEEE International Conference Of Electron Devices And Solid-State Circuits (EDSSC 2011), Tianjin, China, 17-18 November 2011en_US
dc.identifier.urihttp://hdl.handle.net/10722/158772-
dc.description.abstractA novel design and method for assembling a tri-color light-emitting diode (LED) device is proposed and demonstrated. LED chips of the primary colors are physically and tightly stacked on top of each other, enabled by laser-micromachined trenches on the backside of chips. Light emitted from each layer of the stack passes through each other, and thus is mixed naturally without additional optics. As a color-tunable device, a wide range of colors can be generated, making it suitable for display purposes. As a phosphor-free white light LED, both high luminous efficacy and CRI was achieved. © 2011 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2011 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)en_US
dc.subjectChip-Stackingen_US
dc.subjectLaser-Micromachiningen_US
dc.subjectLeden_US
dc.titleVertical integration of light-emitting diode chipsen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2011.6117561en_US
dc.identifier.scopuseid_2-s2.0-84856082608en_US
dc.identifier.hkuros204501-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84856082608&selection=ref&src=s&origin=recordpageen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US

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