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Conference Paper: Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

TitleHydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates
Authors
KeywordsGas Sensor
Hydrogen
Rf Sputtering
Schottky Diode
Tantalum Oxide
Issue Date2011
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors and Actuators A: Physical, 2011, v. 172 n. 1, p. 9-14 How to Cite?
AbstractWe developed Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta 2O 5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications. © 2011 Elsevier B.V. All rights reserved.
DescriptionThe journal issue is a special issue of the Eurosensors XXIV Conference, Linz, Austria, 5-8 September 2010
Persistent Identifierhttp://hdl.handle.net/10722/158746
ISSN
2014 Impact Factor: 1.903
2013 SCImago Journal Rankings: 0.854
ISI Accession Number ID
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 713510E
Funding Information:

The work herein is supported by the RGC of HKSAR, China (Project No. HKU 713510E).

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorYu, Jen_US
dc.contributor.authorChen, Gen_US
dc.contributor.authorLi, CXen_US
dc.contributor.authorShafiei, Men_US
dc.contributor.authorOu, JZen_US
dc.contributor.authorDu Plessis, Jen_US
dc.contributor.authorKalantar-Zadeh, Ken_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorWlodarski, Wen_US
dc.date.accessioned2012-08-08T09:01:08Z-
dc.date.available2012-08-08T09:01:08Z-
dc.date.issued2011en_US
dc.identifier.citationSensors and Actuators A: Physical, 2011, v. 172 n. 1, p. 9-14en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://hdl.handle.net/10722/158746-
dc.descriptionThe journal issue is a special issue of the Eurosensors XXIV Conference, Linz, Austria, 5-8 September 2010-
dc.description.abstractWe developed Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta 2O 5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications. © 2011 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_US
dc.relation.ispartofSensors and Actuators A: Physicalen_US
dc.subjectGas Sensoren_US
dc.subjectHydrogenen_US
dc.subjectRf Sputteringen_US
dc.subjectSchottky Diodeen_US
dc.subjectTantalum Oxideen_US
dc.titleHydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substratesen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.sna.2011.02.021en_US
dc.identifier.scopuseid_2-s2.0-82755187363en_US
dc.identifier.hkuros204658-
dc.identifier.hkuros225725-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-82755187363&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume172en_US
dc.identifier.issue1en_US
dc.identifier.spage9en_US
dc.identifier.epage14en_US
dc.identifier.isiWOS:000298465100003-
dc.publisher.placeSwitzerlanden_US
dc.relation.projectHigh-Stability and High-Sensitivity MISiC Hydrogen Sensor by using Hf-based Gate Dielectrics-
dc.identifier.scopusauthoridYu, J=35209338200en_US
dc.identifier.scopusauthoridChen, G=36767097200en_US
dc.identifier.scopusauthoridLi, CX=13906721600en_US
dc.identifier.scopusauthoridShafiei, M=24077702700en_US
dc.identifier.scopusauthoridOu, JZ=36550690200en_US
dc.identifier.scopusauthoridPlessis, JD=16239774000en_US
dc.identifier.scopusauthoridKalantarZadeh, K=26540761800en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridWlodarski, W=7006793847en_US
dc.identifier.citeulike8927337-
dc.customcontrol.immutablejt 130314-

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