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Conference Paper: Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates
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TitleHydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates
 
AuthorsYu, J2
Chen, G1
Li, CX1
Shafiei, M2
Ou, JZ2
Du Plessis, J
Kalantar-Zadeh, K2
Lai, PT1
Wlodarski, W2
 
KeywordsGas Sensor
Hydrogen
Rf Sputtering
Schottky Diode
Tantalum Oxide
 
Issue Date2011
 
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
 
CitationSensors and Actuators A: Physical, 2011, v. 172 n. 1, p. 9-14 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.sna.2011.02.021
 
AbstractWe developed Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta 2O 5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications. © 2011 Elsevier B.V. All rights reserved.
 
DescriptionThe journal issue is a special issue of the Eurosensors XXIV Conference, Linz, Austria, 5-8 September 2010
 
ISSN0924-4247
2013 Impact Factor: 1.943
2013 SCImago Journal Rankings: 0.854
 
DOIhttp://dx.doi.org/10.1016/j.sna.2011.02.021
 
ISI Accession Number IDWOS:000298465100003
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 713510E
Funding Information:

The work herein is supported by the RGC of HKSAR, China (Project No. HKU 713510E).

 
ReferencesReferences in Scopus
 
GrantsHigh-Stability and High-Sensitivity MISiC Hydrogen Sensor by using Hf-based Gate Dielectrics
 
DC FieldValue
dc.contributor.authorYu, J
 
dc.contributor.authorChen, G
 
dc.contributor.authorLi, CX
 
dc.contributor.authorShafiei, M
 
dc.contributor.authorOu, JZ
 
dc.contributor.authorDu Plessis, J
 
dc.contributor.authorKalantar-Zadeh, K
 
dc.contributor.authorLai, PT
 
dc.contributor.authorWlodarski, W
 
dc.date.accessioned2012-08-08T09:01:08Z
 
dc.date.available2012-08-08T09:01:08Z
 
dc.date.issued2011
 
dc.description.abstractWe developed Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta 2O 5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications. © 2011 Elsevier B.V. All rights reserved.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.descriptionThe journal issue is a special issue of the Eurosensors XXIV Conference, Linz, Austria, 5-8 September 2010
 
dc.identifier.citationSensors and Actuators A: Physical, 2011, v. 172 n. 1, p. 9-14 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.sna.2011.02.021
 
dc.identifier.citeulike8927337
 
dc.identifier.doihttp://dx.doi.org/10.1016/j.sna.2011.02.021
 
dc.identifier.epage14
 
dc.identifier.hkuros204658
 
dc.identifier.hkuros225725
 
dc.identifier.isiWOS:000298465100003
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 713510E
Funding Information:

The work herein is supported by the RGC of HKSAR, China (Project No. HKU 713510E).

 
dc.identifier.issn0924-4247
2013 Impact Factor: 1.943
2013 SCImago Journal Rankings: 0.854
 
dc.identifier.issue1
 
dc.identifier.scopuseid_2-s2.0-82755187363
 
dc.identifier.spage9
 
dc.identifier.urihttp://hdl.handle.net/10722/158746
 
dc.identifier.volume172
 
dc.languageeng
 
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
 
dc.publisher.placeSwitzerland
 
dc.relation.ispartofSensors and Actuators A: Physical
 
dc.relation.projectHigh-Stability and High-Sensitivity MISiC Hydrogen Sensor by using Hf-based Gate Dielectrics
 
dc.relation.referencesReferences in Scopus
 
dc.subjectGas Sensor
 
dc.subjectHydrogen
 
dc.subjectRf Sputtering
 
dc.subjectSchottky Diode
 
dc.subjectTantalum Oxide
 
dc.titleHydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates
 
dc.typeConference_Paper
 
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Author Affiliations
  1. The University of Hong Kong
  2. Royal Melbourne Institute of Technology University