Conference Paper: Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

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TitleHydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates
AuthorsYu, J2
Chen, G1
Li, CX1
Shafiei, M2
Ou, JZ2
Du Plessis, J
Kalantar-Zadeh, K2
Lai, PT1
Wlodarski, W2
KeywordsGas Sensor
Hydrogen
Rf Sputtering
Schottky Diode
Tantalum Oxide
Issue Date2011
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
CitationSensors and Actuators A: Physical, 2011, v. 172 n. 1, p. 9-14 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.sna.2011.02.021
AbstractWe developed Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta 2O 5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications. © 2011 Elsevier B.V. All rights reserved.
DescriptionThe journal issue is a special issue of the Eurosensors XXIV Conference, Linz, Austria, 5-8 September 2010
ISSN0924-4247
2011 Impact Factor: 1.802
2011 SCImago Journal Rankings: 0.234
DOIhttp://dx.doi.org/10.1016/j.sna.2011.02.021
ISI Accession Number IDWOS:000298465100003
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 713510E
Funding Information:

The work herein is supported by the RGC of HKSAR, China (Project No. HKU 713510E).

ReferencesReferences in Scopus
GrantsHigh-Stability and High-Sensitivity MISiC Hydrogen Sensor by using Hf-based Gate Dielectrics
DC Field
Value
dc.contributor.authorYu, J
dc.contributor.authorChen, G
dc.contributor.authorLi, CX
dc.contributor.authorShafiei, M
dc.contributor.authorOu, JZ
dc.contributor.authorDu Plessis, J
dc.contributor.authorKalantar-Zadeh, K
dc.contributor.authorLai, PT
dc.contributor.authorWlodarski, W
dc.date.accessioned2012-08-08T09:01:08Z
dc.date.available2012-08-08T09:01:08Z
dc.date.issued2011
dc.description.abstractWe developed Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta 2O 5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications. © 2011 Elsevier B.V. All rights reserved.
dc.description.grantHigh-Stability and High-Sensitivity MISiC Hydrogen Sensor by using Hf-based Gate Dielectrics
dc.description.grantcode103372
dc.description.natureLink_to_subscribed_fulltext
dc.descriptionThe journal issue is a special issue of the Eurosensors XXIV Conference, Linz, Austria, 5-8 September 2010
dc.identifier.citationSensors and Actuators A: Physical, 2011, v. 172 n. 1, p. 9-14 [How to Cite?]
DOI: http://dx.doi.org/10.1016/j.sna.2011.02.021
dc.identifier.citeulike8927337
dc.identifier.doihttp://dx.doi.org/10.1016/j.sna.2011.02.021
dc.identifier.epage14
dc.identifier.hkuros204658
dc.identifier.isiWOS:000298465100003
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 713510E
Funding Information:

The work herein is supported by the RGC of HKSAR, China (Project No. HKU 713510E).

dc.identifier.issn0924-4247
2011 Impact Factor: 1.802
2011 SCImago Journal Rankings: 0.234
dc.identifier.issue1
dc.identifier.scopuseid_2-s2.0-82755187363
dc.identifier.spage9
dc.identifier.urihttp://hdl.handle.net/10722/158746
dc.identifier.volume172
dc.languageeng
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
dc.publisher.placeSwitzerland
dc.relation.ispartofSensors and Actuators A: Physical
dc.relation.referencesReferences in Scopus
dc.subjectGas Sensor
dc.subjectHydrogen
dc.subjectRf Sputtering
dc.subjectSchottky Diode
dc.subjectTantalum Oxide
dc.titleHydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates
dc.typeConference_Paper
Author Affiliations
  1. The University of Hong Kong
  2. Royal Melbourne Institute of Technology University