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Conference Paper: Robustness enhancement in optical lithography: From pixelated mask optimization to pixelated source-mask optimization

TitleRobustness enhancement in optical lithography: From pixelated mask optimization to pixelated source-mask optimization
Authors
Issue Date2011
Citation
Ecs Transactions, 2011, v. 34 n. 1, p. 203-208 How to Cite?
AbstractOptical lithography is facing a great challenge from the continuous shrinkage of industry node toward 22nm or below. The increasing sensitivity to process variations becomes a key problem hindering further progress. To address this problem, inverse lithography, which designs pixelated masks with appropriate algorithms, is favored for its capacity of exploring a larger solution space. This search capacity, however, is limited by the fixed source configuration. To this end, optimization of pixelated source and pixelated mask together has come up for further performance improvement. In this paper, a source-mask co-optimization (SMO) algorithm, which incorporates process variations into the optimization scheme, is introduced. To further improve the process robustness, we apply weighted total variation and aerial image intensity control as regularization. Simulation results show that we achieve greater pattern fidelity and enhanced process robustness by using SMO. ©The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/158709
ISSN
2015 SCImago Journal Rankings: 0.212
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorJia, Nen_US
dc.contributor.authorLam, EYen_US
dc.date.accessioned2012-08-08T09:00:59Z-
dc.date.available2012-08-08T09:00:59Z-
dc.date.issued2011en_US
dc.identifier.citationEcs Transactions, 2011, v. 34 n. 1, p. 203-208en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/10722/158709-
dc.description.abstractOptical lithography is facing a great challenge from the continuous shrinkage of industry node toward 22nm or below. The increasing sensitivity to process variations becomes a key problem hindering further progress. To address this problem, inverse lithography, which designs pixelated masks with appropriate algorithms, is favored for its capacity of exploring a larger solution space. This search capacity, however, is limited by the fixed source configuration. To this end, optimization of pixelated source and pixelated mask together has come up for further performance improvement. In this paper, a source-mask co-optimization (SMO) algorithm, which incorporates process variations into the optimization scheme, is introduced. To further improve the process robustness, we apply weighted total variation and aerial image intensity control as regularization. Simulation results show that we achieve greater pattern fidelity and enhanced process robustness by using SMO. ©The Electrochemical Society.en_US
dc.languageengen_US
dc.relation.ispartofECS Transactionsen_US
dc.titleRobustness enhancement in optical lithography: From pixelated mask optimization to pixelated source-mask optimizationen_US
dc.typeConference_Paperen_US
dc.identifier.emailLam, EY:elam@eee.hku.hken_US
dc.identifier.authorityLam, EY=rp00131en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1149/1.3567582en_US
dc.identifier.scopuseid_2-s2.0-79959672314en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79959672314&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume34en_US
dc.identifier.issue1en_US
dc.identifier.spage203en_US
dc.identifier.epage208en_US
dc.identifier.isiWOS:000300456600032-
dc.identifier.scopusauthoridJia, N=34872289800en_US
dc.identifier.scopusauthoridLam, EY=7102890004en_US

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