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Conference Paper: Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3

TitleImproved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3
Authors
Issue Date2010
Citation
Ecs Transactions, 2010, v. 33 n. 5, p. 265-272 How to Cite?
AbstractPentacene organic thin-film transistors with HfLaO as gate dielectric were fabricated. The dielectric was prepared by sputtering method with a dielectric constant over 11, and hence the OTFTs could operate at a voltage less than 5 V. The dielectric was annealed in N 2, NO or NH 3 at 400 °C after sputtering to passivate the surface of the dielectric. The OTFT treated in NH 3 displayed higher carrier mobility, smaller sub-threshold swing, and lower 1/f noise than the OTFTs annealed in N 2 and NO respectively. SEM image indicated that pentacene inclined to form larger grains on the dielectric annealed in NH 3 than the dielectric annealed in N 2 or NO. The enhanced electrical performance of OTFTs annealed in NH 3 can be attributed to the improved interfacial characteristics between the organic film and the gate dielectric. ©The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/158699
ISSN
2015 SCImago Journal Rankings: 0.212
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDeng, LFen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorChen, WBen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2012-08-08T09:00:55Z-
dc.date.available2012-08-08T09:00:55Z-
dc.date.issued2010en_HK
dc.identifier.citationEcs Transactions, 2010, v. 33 n. 5, p. 265-272en_US
dc.identifier.issn1938-5862en_HK
dc.identifier.urihttp://hdl.handle.net/10722/158699-
dc.description.abstractPentacene organic thin-film transistors with HfLaO as gate dielectric were fabricated. The dielectric was prepared by sputtering method with a dielectric constant over 11, and hence the OTFTs could operate at a voltage less than 5 V. The dielectric was annealed in N 2, NO or NH 3 at 400 °C after sputtering to passivate the surface of the dielectric. The OTFT treated in NH 3 displayed higher carrier mobility, smaller sub-threshold swing, and lower 1/f noise than the OTFTs annealed in N 2 and NO respectively. SEM image indicated that pentacene inclined to form larger grains on the dielectric annealed in NH 3 than the dielectric annealed in N 2 or NO. The enhanced electrical performance of OTFTs annealed in NH 3 can be attributed to the improved interfacial characteristics between the organic film and the gate dielectric. ©The Electrochemical Society.en_HK
dc.languageengen_US
dc.relation.ispartofECS Transactionsen_HK
dc.titleImproved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3en_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1149/1.3481246en_HK
dc.identifier.scopuseid_2-s2.0-79952676715en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952676715&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume33en_HK
dc.identifier.issue5en_HK
dc.identifier.spage265en_HK
dc.identifier.epage272en_HK
dc.identifier.isiWOS:000315444100033-
dc.identifier.scopusauthoridDeng, LF=25936092200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=35754128700en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridChen, WB=23982219600en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK

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