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Conference Paper: Varying sputtering ambient and annealing gas to optimize the electrical properties of mos capacitor with HfLaO gate dielectric

TitleVarying sputtering ambient and annealing gas to optimize the electrical properties of mos capacitor with HfLaO gate dielectric
Authors
Tao, QBLai, PT
KeywordsGate Leakage
Hflao Film
Interface-State Density
Permittivity
Issue Date2010
Citation
2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2010.5713772
AbstractThe impact of sputtering ambient on the properties of HfLaO film is studied by varying the ratio of Ar to O 2. In order to optimize the electrical performances, the HfLaO film is then annealed in N 2, NO or NH 3 and evaluated based on Si MOS capacitors. As a result, appropriate ratio of Ar to O 2 during sputtering can increase the permittivity of film while the NH 3 annealing can improve its properties. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158693
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorTao, QBen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T09:00:52Z-
dc.date.available2012-08-08T09:00:52Z-
dc.date.issued2010en_US
dc.identifier.citation2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010en_US
dc.identifier.urihttp://hdl.handle.net/10722/158693-
dc.description.abstractThe impact of sputtering ambient on the properties of HfLaO film is studied by varying the ratio of Ar to O 2. In order to optimize the electrical performances, the HfLaO film is then annealed in N 2, NO or NH 3 and evaluated based on Si MOS capacitors. As a result, appropriate ratio of Ar to O 2 during sputtering can increase the permittivity of film while the NH 3 annealing can improve its properties. © 2010 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010en_US
dc.subjectGate Leakageen_US
dc.subjectHflao Filmen_US
dc.subjectInterface-State Densityen_US
dc.subjectPermittivityen_US
dc.titleVarying sputtering ambient and annealing gas to optimize the electrical properties of mos capacitor with HfLaO gate dielectricen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2010.5713772en_US
dc.identifier.scopuseid_2-s2.0-79952518677en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952518677&selection=ref&src=s&origin=recordpageen_US
dc.identifier.scopusauthoridTao, QB=37058027100en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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