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Conference Paper: YAlO x as inter-poly delectric for improved performance of flash-memory application

TitleYAlO x as inter-poly delectric for improved performance of flash-memory application
Authors
Huang, XDLai, PT
KeywordsFlash Memory
Inter-Poly Dielectric (Ipd)
Yalo X
Issue Date2010
Citation
2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2010.5713746
AbstractY-doped A1 2O 3 (YAlO x) with different Y contents is studied as the inter-poly dielectric (IPD) for flash memory application. Comparing to Al 2O 3 and Y 2O 3 films, the optimized YAlO x shows lower interface-state density, better thermal properties, lower charge-trap density and smaller leakage. Therefore, the optimized YAlO x is a promising candidate as IPD for flash memory. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158692
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHuang, XDen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T09:00:52Z-
dc.date.available2012-08-08T09:00:52Z-
dc.date.issued2010en_US
dc.identifier.citation2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010en_US
dc.identifier.urihttp://hdl.handle.net/10722/158692-
dc.description.abstractY-doped A1 2O 3 (YAlO x) with different Y contents is studied as the inter-poly dielectric (IPD) for flash memory application. Comparing to Al 2O 3 and Y 2O 3 films, the optimized YAlO x shows lower interface-state density, better thermal properties, lower charge-trap density and smaller leakage. Therefore, the optimized YAlO x is a promising candidate as IPD for flash memory. © 2010 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010en_US
dc.subjectFlash Memoryen_US
dc.subjectInter-Poly Dielectric (Ipd)en_US
dc.subjectYalo Xen_US
dc.titleYAlO x as inter-poly delectric for improved performance of flash-memory applicationen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2010.5713746en_US
dc.identifier.scopuseid_2-s2.0-79952507781en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952507781&selection=ref&src=s&origin=recordpageen_US
dc.identifier.scopusauthoridHuang, XD=37057428400en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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