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Conference Paper: A study on hydrogen adsorption of Metal-Insulator-Silicon sensor with La 2O 3 as gate insulator

TitleA study on hydrogen adsorption of Metal-Insulator-Silicon sensor with La 2O 3 as gate insulator
Authors
KeywordsHydrogen Sensor
Schottky Diode
Silicon
Issue Date2010
Citation
2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010 How to Cite?
AbstractA new Metal-Insulator-Silicon (MIS) Schottky-diode hydrogen sensor with La 2O 3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 200°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C. Furthermore, hydrogen reaction kinetics was confirmed for the sample. The response time extracted from its hydrogen adsorption transient behavior was around 4.5 s at 150°C, while a hydrogen adsorption activation energy of 10.9 kcal/mol was obtained for the sensor. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158691
References

 

DC FieldValueLanguage
dc.contributor.authorChen, Gen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorYu, Jen_US
dc.date.accessioned2012-08-08T09:00:52Z-
dc.date.available2012-08-08T09:00:52Z-
dc.date.issued2010en_US
dc.identifier.citation2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010en_US
dc.identifier.urihttp://hdl.handle.net/10722/158691-
dc.description.abstractA new Metal-Insulator-Silicon (MIS) Schottky-diode hydrogen sensor with La 2O 3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 200°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C. Furthermore, hydrogen reaction kinetics was confirmed for the sample. The response time extracted from its hydrogen adsorption transient behavior was around 4.5 s at 150°C, while a hydrogen adsorption activation energy of 10.9 kcal/mol was obtained for the sensor. © 2010 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010en_US
dc.subjectHydrogen Sensoren_US
dc.subjectSchottky Diodeen_US
dc.subjectSiliconen_US
dc.titleA study on hydrogen adsorption of Metal-Insulator-Silicon sensor with La 2O 3 as gate insulatoren_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2010.5713689en_US
dc.identifier.scopuseid_2-s2.0-79952505156en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952505156&selection=ref&src=s&origin=recordpageen_US
dc.identifier.scopusauthoridChen, G=35777710500en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridYu, J=35209338200en_US

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