Thermal and electrical characteristics of HfLaON with different nitridation annealings

Abstract

In summary, based on MOS structures, the thermal and electrical characteristics of HfLaON with different nitrogen annealings have been studied. The samples annealed in NO (denoted as 2NO sample) or NH 3 (2NH3 sample) ambient remain amorphous even after annealing at 1000 °C. Furthermore, the 2NH3 sample shows the largest effective permittivity (9.5), lowest interface-state density (1.7×10 11 cm -2eV -1), smallest gate leakage (2.1×10 -7 A/cm 2), and smallest surface roughness (0.119 nm) among all the samples, due to its strongest nitrogen incorporation, as well as removal of hydrogen-related traps and other defects at 1000 °C. The effective barrier height of HfLaON with respect to silicon is 1.56 eV, which is 38% larger than that of HfO2. Therefore, HfLaON with NH 3 treatment at 1000 °C is a promising candidate as the gate oxide for future CMOS technology. ©2010 IEEE.