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Conference Paper: Hydrogen gas sensing properties of Pt/Ta 2O 5 Schottky diodes based on Si and SiC substrates

TitleHydrogen gas sensing properties of Pt/Ta 2O 5 Schottky diodes based on Si and SiC substrates
Authors
KeywordsGas Sensor
Hydrogen
Rf Sputtering
Schottky Diode
Tantalum Oxide
Issue Date2010
Citation
Procedia Engineering, 2010, v. 5, p. 147-151 How to Cite?
AbstractIn this paper, we fabricated Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin (4 nm) layer of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates by radio frequency (RF) sputtering technique. We compared the performance of these sensors at different elevated temperatures of 100°C and 150°C. At these temperatures, the sensor based on SiC exhibited a larger sensitivity while the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the responses exhibited by the Pt/Ta 2O 5 based Schottky diodes demonstrated a promising potential for hydrogen sensing applications.
Persistent Identifierhttp://hdl.handle.net/10722/158668
ISSN
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYu, Jen_US
dc.contributor.authorChen, Gen_US
dc.contributor.authorLi, CXen_US
dc.contributor.authorShafiei, Men_US
dc.contributor.authorOu, Jen_US
dc.contributor.authorDu Plessis, Jen_US
dc.contributor.authorKalantar-Zadeh, Ken_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorWlodarski, Wen_US
dc.date.accessioned2012-08-08T09:00:46Z-
dc.date.available2012-08-08T09:00:46Z-
dc.date.issued2010en_US
dc.identifier.citationProcedia Engineering, 2010, v. 5, p. 147-151en_US
dc.identifier.issn1877-7058en_US
dc.identifier.urihttp://hdl.handle.net/10722/158668-
dc.description.abstractIn this paper, we fabricated Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin (4 nm) layer of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates by radio frequency (RF) sputtering technique. We compared the performance of these sensors at different elevated temperatures of 100°C and 150°C. At these temperatures, the sensor based on SiC exhibited a larger sensitivity while the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the responses exhibited by the Pt/Ta 2O 5 based Schottky diodes demonstrated a promising potential for hydrogen sensing applications.en_US
dc.languageengen_US
dc.relation.ispartofProcedia Engineeringen_US
dc.subjectGas Sensoren_US
dc.subjectHydrogenen_US
dc.subjectRf Sputteringen_US
dc.subjectSchottky Diodeen_US
dc.subjectTantalum Oxideen_US
dc.titleHydrogen gas sensing properties of Pt/Ta 2O 5 Schottky diodes based on Si and SiC substratesen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_OA_fulltexten_US
dc.identifier.doi10.1016/j.proeng.2010.09.069en_US
dc.identifier.scopuseid_2-s2.0-78650597316en_US
dc.identifier.hkuros225722-
dc.identifier.hkuros204659-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78650597316&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume5en_US
dc.identifier.spage147en_US
dc.identifier.epage151en_US
dc.identifier.isiWOS:000287162400037-
dc.identifier.scopusauthoridYu, J=35209338200en_US
dc.identifier.scopusauthoridChen, G=36767097200en_US
dc.identifier.scopusauthoridLi, CX=13906721600en_US
dc.identifier.scopusauthoridShafiei, M=24077702700en_US
dc.identifier.scopusauthoridOu, J=36550690200en_US
dc.identifier.scopusauthoridDu Plessis, J=7102846360en_US
dc.identifier.scopusauthoridKalantarzadeh, K=26540761800en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridWlodarski, W=7006793847en_US

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