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Conference Paper: Effect of plasma oxidation on pre-oxidized magnetic tunnel junctions

TitleEffect of plasma oxidation on pre-oxidized magnetic tunnel junctions
Authors
KeywordsIntermixing
Magnetic Tunnel Junction
Orange-Peel Coupling
Plasma Oxidation
Pre-Oxidation
Issue Date2008
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20
Citation
Ieee Transactions On Magnetics, 2008, v. 44 n. 11 PART 2, p. 2911-2913 How to Cite?
AbstractThe technique of pre-oxidation of the bottom CoFe electrode prior to deposition of Al2O3 was previously shown to be capable of suppressing intermixing at the ferromagnet/Al interface and removing partial shorts near Al grain boundaries. In this paper, we studied the influence of the plasma oxidation on the pre-oxidized magnetic tunnel junctions (MTJs). In general, the tunneling magnetoresistance (TMR) is independent of the plasma oxidation time whereas the resistance-area product (RA) increases with it. However, for the pre-oxidized MTJs with very thin Al2 O3 (Al thickness < 0.7 nm prior to plasma oxidation), the TMR decreases with plasma oxidation while the RA increases with it. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158644
ISSN
2015 Impact Factor: 1.277
2015 SCImago Journal Rankings: 0.602
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorPong, PWTen_US
dc.contributor.authorSchmoueli, Men_US
dc.contributor.authorEgelhoff, WFen_US
dc.date.accessioned2012-08-08T09:00:38Z-
dc.date.available2012-08-08T09:00:38Z-
dc.date.issued2008en_US
dc.identifier.citationIeee Transactions On Magnetics, 2008, v. 44 n. 11 PART 2, p. 2911-2913en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://hdl.handle.net/10722/158644-
dc.description.abstractThe technique of pre-oxidation of the bottom CoFe electrode prior to deposition of Al2O3 was previously shown to be capable of suppressing intermixing at the ferromagnet/Al interface and removing partial shorts near Al grain boundaries. In this paper, we studied the influence of the plasma oxidation on the pre-oxidized magnetic tunnel junctions (MTJs). In general, the tunneling magnetoresistance (TMR) is independent of the plasma oxidation time whereas the resistance-area product (RA) increases with it. However, for the pre-oxidized MTJs with very thin Al2 O3 (Al thickness < 0.7 nm prior to plasma oxidation), the TMR decreases with plasma oxidation while the RA increases with it. © 2008 IEEE.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=20en_US
dc.relation.ispartofIEEE Transactions on Magneticsen_US
dc.subjectIntermixingen_US
dc.subjectMagnetic Tunnel Junctionen_US
dc.subjectOrange-Peel Couplingen_US
dc.subjectPlasma Oxidationen_US
dc.subjectPre-Oxidationen_US
dc.titleEffect of plasma oxidation on pre-oxidized magnetic tunnel junctionsen_US
dc.typeConference_Paperen_US
dc.identifier.emailPong, PWT:ppong@eee.hku.hken_US
dc.identifier.authorityPong, PWT=rp00217en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/TMAG.2008.2001329en_US
dc.identifier.scopuseid_2-s2.0-77955104091en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955104091&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume44en_US
dc.identifier.issue11 PART 2en_US
dc.identifier.spage2911en_US
dc.identifier.epage2913en_US
dc.identifier.isiWOS:000262221200119-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridPong, PWT=24071267900en_US
dc.identifier.scopusauthoridSchmoueli, M=24071996300en_US
dc.identifier.scopusauthoridEgelhoff, WF=7006151986en_US

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