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Conference Paper: Effects of annealing temperature on sensing properties of Pt/HfO2/SiC Schottky-diode hydrogen sensor

TitleEffects of annealing temperature on sensing properties of Pt/HfO2/SiC Schottky-diode hydrogen sensor
Authors
Tang, WMLeung, CHLai, PT
KeywordsAir ambient
Annealing temperatures
Hydrogen-sensing properties
Metal-insulator-sic
Schottky
Issue Date2008
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2008.4760752
AbstractHafnium oxide (HfO 2) is successfully used as gate insulator for fabricating Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N 2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the HfO 2 film; improve the oxide stoichiometry; and facilitate the growth of a SiO 2 interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158581
ISBN
978-1-4244-2540-2
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T09:00:20Z-
dc.date.available2012-08-08T09:00:20Z-
dc.date.issued2008en_US
dc.identifier.citationThe 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4en_US
dc.identifier.isbn978-1-4244-2540-2-
dc.identifier.urihttp://hdl.handle.net/10722/158581-
dc.description.abstractHafnium oxide (HfO 2) is successfully used as gate insulator for fabricating Metal-Insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N 2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the HfO 2 film; improve the oxide stoichiometry; and facilitate the growth of a SiO 2 interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated. © 2008 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_US
dc.rights©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectAir ambient-
dc.subjectAnnealing temperatures-
dc.subjectHydrogen-sensing properties-
dc.subjectMetal-insulator-sic-
dc.subjectSchottky-
dc.titleEffects of annealing temperature on sensing properties of Pt/HfO2/SiC Schottky-diode hydrogen sensoren_US
dc.typeConference_Paperen_US
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/EDSSC.2008.4760752en_US
dc.identifier.scopuseid_2-s2.0-63249096894en_US
dc.identifier.hkuros164271-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63249096894&selection=ref&src=s&origin=recordpageen_US
dc.identifier.spage1-
dc.identifier.epage4-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLeung, CH=7402612415en_US
dc.identifier.scopusauthoridTang, WM=24438163600en_US
dc.customcontrol.immutablesml 140526-

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