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Conference Paper: Robust mask design with defocus variation using inverse synthesis

TitleRobust mask design with defocus variation using inverse synthesis
Authors
KeywordsDefocus
Image Synthesis
Inverse Lithography
Optical Proximity Correction
Issue Date2008
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2008, v. 7140 How to Cite?
AbstractThe continuous integrated circuit miniaturization and the shrinkage of critical dimension (CD) have pushed the development of optical proximity correction (OPC), and also making CD more sensitive to process variations. Traditional OPC optimizes mask patterns at nominal lithography conditions, which may lead to poor performance with process variations. Hence, OPC software nowadays needs to take different process conditions into consideration to enhance the robustness of layout patterns. In this paper, we propose an algorithm which considers the defocus as a random variable when incorporating it into an inverse imaging framework to optimize the input mask, in order to gain more robustness for a wider range of focus errors. The optimal mask is calculated in a statistical manner by minimizing the expected difference between output patterns at different defocus conditions and the target pattern. With the necessary tradeoff in the close proximity of the nominal focus condition, the optimized mask gives more robust performance under a wider range of focus errors. © 2008 SPIE.
Persistent Identifierhttp://hdl.handle.net/10722/158574
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorJia, Nen_US
dc.contributor.authorWong, AKen_US
dc.contributor.authorLam, EYen_US
dc.date.accessioned2012-08-08T09:00:19Z-
dc.date.available2012-08-08T09:00:19Z-
dc.date.issued2008en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2008, v. 7140en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/158574-
dc.description.abstractThe continuous integrated circuit miniaturization and the shrinkage of critical dimension (CD) have pushed the development of optical proximity correction (OPC), and also making CD more sensitive to process variations. Traditional OPC optimizes mask patterns at nominal lithography conditions, which may lead to poor performance with process variations. Hence, OPC software nowadays needs to take different process conditions into consideration to enhance the robustness of layout patterns. In this paper, we propose an algorithm which considers the defocus as a random variable when incorporating it into an inverse imaging framework to optimize the input mask, in order to gain more robustness for a wider range of focus errors. The optimal mask is calculated in a statistical manner by minimizing the expected difference between output patterns at different defocus conditions and the target pattern. With the necessary tradeoff in the close proximity of the nominal focus condition, the optimized mask gives more robust performance under a wider range of focus errors. © 2008 SPIE.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.subjectDefocusen_US
dc.subjectImage Synthesisen_US
dc.subjectInverse Lithographyen_US
dc.subjectOptical Proximity Correctionen_US
dc.titleRobust mask design with defocus variation using inverse synthesisen_US
dc.typeConference_Paperen_US
dc.identifier.emailLam, EY:elam@eee.hku.hken_US
dc.identifier.authorityLam, EY=rp00131en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.804681en_US
dc.identifier.scopuseid_2-s2.0-62449197822en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-62449197822&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume7140en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridJia, N=34872289800en_US
dc.identifier.scopusauthoridWong, AK=7403147663en_US
dc.identifier.scopusauthoridLam, EY=7102890004en_US

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