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Conference Paper: Fabrication of spintronic devices - Etching endpoint detection by resistance measurement for magnetic tunnel junctions

TitleFabrication of spintronic devices - Etching endpoint detection by resistance measurement for magnetic tunnel junctions
Authors
KeywordsEndpoint Detection
Fabrication
Magnetic Tunnel Junction
Spintronics
Tunneling Magnetoresistance
Issue Date2007
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2007, v. 6645 How to Cite?
AbstractMagnetic tunnel junctions (MTJs) have received tremendous interest since the discovery of substantial room temperature tunneling magnetoresistance (TMR) due to spin-dependent tunneling, and have been intensively investigated for applications in next-generation memory devices, hard disk drives, and magnetic sensors. In the fabrication of MTJs, etching is needed to remove the top cap layers, upper magnetic layers, and the middle oxide layer in order to form a tunneling junction. In view of this, we have devised an innovative, simple, low-cost endpoint detection method for fabricating MTJs. In this method, the endpoint is detected by measurement of the sheet resistance of the MTJ stack. Only a multimeter is needed in this method, hence it provides a simple low-cost alternative for spintronic device researchers to explore the research field of magnetic tunnel junctions. This technique is also of great use in other kinds of metallic stack etching experiments.
Persistent Identifierhttp://hdl.handle.net/10722/158502
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorPong, PWTen_US
dc.contributor.authorSchmoueli, Men_US
dc.contributor.authorEgelhoff Jr, WFen_US
dc.date.accessioned2012-08-08T08:59:58Z-
dc.date.available2012-08-08T08:59:58Z-
dc.date.issued2007en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2007, v. 6645en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/158502-
dc.description.abstractMagnetic tunnel junctions (MTJs) have received tremendous interest since the discovery of substantial room temperature tunneling magnetoresistance (TMR) due to spin-dependent tunneling, and have been intensively investigated for applications in next-generation memory devices, hard disk drives, and magnetic sensors. In the fabrication of MTJs, etching is needed to remove the top cap layers, upper magnetic layers, and the middle oxide layer in order to form a tunneling junction. In view of this, we have devised an innovative, simple, low-cost endpoint detection method for fabricating MTJs. In this method, the endpoint is detected by measurement of the sheet resistance of the MTJ stack. Only a multimeter is needed in this method, hence it provides a simple low-cost alternative for spintronic device researchers to explore the research field of magnetic tunnel junctions. This technique is also of great use in other kinds of metallic stack etching experiments.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.subjectEndpoint Detectionen_US
dc.subjectFabricationen_US
dc.subjectMagnetic Tunnel Junctionen_US
dc.subjectSpintronicsen_US
dc.subjectTunneling Magnetoresistanceen_US
dc.titleFabrication of spintronic devices - Etching endpoint detection by resistance measurement for magnetic tunnel junctionsen_US
dc.typeConference_Paperen_US
dc.identifier.emailPong, PWT:ppong@eee.hku.hken_US
dc.identifier.authorityPong, PWT=rp00217en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.731136en_US
dc.identifier.scopuseid_2-s2.0-42149179823en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-42149179823&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume6645en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridPong, PWT=24071267900en_US
dc.identifier.scopusauthoridSchmoueli, M=24071996300en_US
dc.identifier.scopusauthoridEgelhoff Jr, WF=7006151986en_US

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