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Conference Paper: Fabrication strategies for magnetic tunnel junctions with magnetoelectronic applications

TitleFabrication strategies for magnetic tunnel junctions with magnetoelectronic applications
Authors
Pong, PWTEgelhoff Jr, WF
KeywordsEtching
Ion Milling
Lift-Off Resist
Lithography
Magnetic Tunnel Junction
Mask
Tunneling Magnetoresistance
Issue Date2007
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2007, v. 6645 How to Cite?
DOI: http://dx.doi.org/10.1117/12.731140
AbstractIn this paper, two lithographic fabrication processes for magnetic tunnel junctions (MTJs) with different mask designs and etching technologies are discussed. The advantages and disadvantages of both processes are compared. The crucial steps to protect the oxide insulating barriers and avoid side-wall redepositions (which may lead to short circuits) are developed, and important design considerations of the mask patterns and the device geometric structures are elaborated. We show that implementing the strategies developed greatly increases the successful manufacturing yield of MTJ magnetoelectronics devices.
Persistent Identifierhttp://hdl.handle.net/10722/158501
ISSN
0277-786X
2020 SCImago Journal Rankings: 0.192
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorPong, PWTen_US
dc.contributor.authorEgelhoff Jr, WFen_US
dc.date.accessioned2012-08-08T08:59:57Z-
dc.date.available2012-08-08T08:59:57Z-
dc.date.issued2007en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2007, v. 6645en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/158501-
dc.description.abstractIn this paper, two lithographic fabrication processes for magnetic tunnel junctions (MTJs) with different mask designs and etching technologies are discussed. The advantages and disadvantages of both processes are compared. The crucial steps to protect the oxide insulating barriers and avoid side-wall redepositions (which may lead to short circuits) are developed, and important design considerations of the mask patterns and the device geometric structures are elaborated. We show that implementing the strategies developed greatly increases the successful manufacturing yield of MTJ magnetoelectronics devices.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.subjectEtchingen_US
dc.subjectIon Millingen_US
dc.subjectLift-Off Resisten_US
dc.subjectLithographyen_US
dc.subjectMagnetic Tunnel Junctionen_US
dc.subjectMasken_US
dc.subjectTunneling Magnetoresistanceen_US
dc.titleFabrication strategies for magnetic tunnel junctions with magnetoelectronic applicationsen_US
dc.typeConference_Paperen_US
dc.identifier.emailPong, PWT:ppong@eee.hku.hken_US
dc.identifier.authorityPong, PWT=rp00217en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.731140en_US
dc.identifier.scopuseid_2-s2.0-42149165730en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-42149165730&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume6645en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridPong, PWT=24071267900en_US
dc.identifier.scopusauthoridEgelhoff Jr, WF=7006151986en_US
dc.identifier.issnl0277-786X-

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