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Conference Paper: Development of ultra-low magnetic field sensors with magnetic tunnel junctions

TitleDevelopment of ultra-low magnetic field sensors with magnetic tunnel junctions
Authors
KeywordsMagnetic Field Sensor
Magnetic Tunnel Junction
Soft Magnetic Layer
Tunneling Magnetoresistance
Wheatstone Bridge
Issue Date2007
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2007, v. 6645 How to Cite?
AbstractThe discovery of tunneling magnetoresistance (TMR) has enhanced the magnetoresistance (MR) ratio from the giant magnetoresistance (GMR) regime of around 10% to over 400% at room temperature. A combination of magnetic tunnel junctions with high magnetoresistance ratio and soft magnetic layers enables the development of ultra-low magnetic field sensor with sensitivity down to the scale of picoTesla. A magnetic field sensor with such high sensitivity would have important applications in biomedicine, information storage, and remote sensing such as higher resolution images for cardiograph and magnetic resonance imaging and thus earlier detection of abnormal health condition; higher hard-disk density; and remote sensing of metallic objects. We have constructed an automated four-probe electrical measurement system for measuring TMR of magnetic tunnel junctions with high throughput, enabling us to optimize the properties of the devices. Magnetron sputtering is used to deposit thin films with thickness ranged from angstroms to nanometers. Photolithography and ion plasma etching are applied to pattern the devices. The devices have a range of size from 10 μm × 10 μm to 80 μm × 80 μm. The device is composed of the bottom electrode, free soft magnetic layer, insulating oxide layer, pinned layer, pinning layer, and top electrode. The magnetization of the free layer can be rotated by the external magnetic field which in turn changes the resistance of the device and provide the sensing capability. The system structure, design consideration, fabrication process, and preliminary experimental results are discussed and presented in this paper.
Persistent Identifierhttp://hdl.handle.net/10722/158497
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorPong, PWTen_US
dc.contributor.authorBonevich, JEen_US
dc.contributor.authorEgelhoff Jr, WFen_US
dc.date.accessioned2012-08-08T08:59:56Z-
dc.date.available2012-08-08T08:59:56Z-
dc.date.issued2007en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2007, v. 6645en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/158497-
dc.description.abstractThe discovery of tunneling magnetoresistance (TMR) has enhanced the magnetoresistance (MR) ratio from the giant magnetoresistance (GMR) regime of around 10% to over 400% at room temperature. A combination of magnetic tunnel junctions with high magnetoresistance ratio and soft magnetic layers enables the development of ultra-low magnetic field sensor with sensitivity down to the scale of picoTesla. A magnetic field sensor with such high sensitivity would have important applications in biomedicine, information storage, and remote sensing such as higher resolution images for cardiograph and magnetic resonance imaging and thus earlier detection of abnormal health condition; higher hard-disk density; and remote sensing of metallic objects. We have constructed an automated four-probe electrical measurement system for measuring TMR of magnetic tunnel junctions with high throughput, enabling us to optimize the properties of the devices. Magnetron sputtering is used to deposit thin films with thickness ranged from angstroms to nanometers. Photolithography and ion plasma etching are applied to pattern the devices. The devices have a range of size from 10 μm × 10 μm to 80 μm × 80 μm. The device is composed of the bottom electrode, free soft magnetic layer, insulating oxide layer, pinned layer, pinning layer, and top electrode. The magnetization of the free layer can be rotated by the external magnetic field which in turn changes the resistance of the device and provide the sensing capability. The system structure, design consideration, fabrication process, and preliminary experimental results are discussed and presented in this paper.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.subjectMagnetic Field Sensoren_US
dc.subjectMagnetic Tunnel Junctionen_US
dc.subjectSoft Magnetic Layeren_US
dc.subjectTunneling Magnetoresistanceen_US
dc.subjectWheatstone Bridgeen_US
dc.titleDevelopment of ultra-low magnetic field sensors with magnetic tunnel junctionsen_US
dc.typeConference_Paperen_US
dc.identifier.emailPong, PWT:ppong@eee.hku.hken_US
dc.identifier.authorityPong, PWT=rp00217en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.731127en_US
dc.identifier.scopuseid_2-s2.0-42149092500en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-42149092500&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume6645en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridPong, PWT=24071267900en_US
dc.identifier.scopusauthoridBonevich, JE=7003395126en_US
dc.identifier.scopusauthoridEgelhoff Jr, WF=7006151986en_US

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