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Conference Paper: ZnO nanorod synthesis from Zn-based II-VI semiconductors

TitleZnO nanorod synthesis from Zn-based II-VI semiconductors
Authors
Issue Date2006
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Trends in Nanotechnology (TNT 2005), Oviedo, Spain, 29 August - 2 September 2005. In Physica Status Solidi (A) Applications And Materials Science, 2006, v. 203 n. 6, p. 1376-1382 How to Cite?
AbstractIn this paper, we report the synthesis of ZnO nanorods on in-situ grown ZnSe grains by using the simple chemical vapor deposition (CVD) method and elementary sources of Zn and Se. To our best knowledge, there is no report of growing other Zn-based nanostructures on in-situ synthesized ZnSe. The ZnO-ZnSe system has the advantage of carrier transfer between the two binary II-VI semiconductors with different energy levels for device applications [1], which cannot be achieved in the single-compound semiconductor nanostructures. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
Persistent Identifierhttp://hdl.handle.net/10722/158442
ISSN
2015 Impact Factor: 1.648
2015 SCImago Journal Rankings: 0.712
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorGuo, CFen_HK
dc.contributor.authorPang, KHen_HK
dc.contributor.authorLeung, YPen_HK
dc.date.accessioned2012-08-08T08:59:38Z-
dc.date.available2012-08-08T08:59:38Z-
dc.date.issued2006en_HK
dc.identifier.citationTrends in Nanotechnology (TNT 2005), Oviedo, Spain, 29 August - 2 September 2005. In Physica Status Solidi (A) Applications And Materials Science, 2006, v. 203 n. 6, p. 1376-1382en_US
dc.identifier.issn1862-6300en_HK
dc.identifier.urihttp://hdl.handle.net/10722/158442-
dc.description.abstractIn this paper, we report the synthesis of ZnO nanorods on in-situ grown ZnSe grains by using the simple chemical vapor deposition (CVD) method and elementary sources of Zn and Se. To our best knowledge, there is no report of growing other Zn-based nanostructures on in-situ synthesized ZnSe. The ZnO-ZnSe system has the advantage of carrier transfer between the two binary II-VI semiconductors with different energy levels for device applications [1], which cannot be achieved in the single-compound semiconductor nanostructures. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.en_HK
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.comen_HK
dc.relation.ispartofPhysica Status Solidi (A) Applications and Materials Scienceen_HK
dc.titleZnO nanorod synthesis from Zn-based II-VI semiconductorsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hken_HK
dc.identifier.emailLeung, YP: ypleung@alumni.cuhk.neten_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.identifier.authorityLeung, YP=rp00145en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/pssa.200566129en_HK
dc.identifier.scopuseid_2-s2.0-33646773961en_HK
dc.identifier.hkuros131713-
dc.identifier.hkuros122538-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33646773961&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume203en_HK
dc.identifier.issue6en_HK
dc.identifier.spage1376en_HK
dc.identifier.epage1382en_HK
dc.identifier.isiWOS:000237841900058-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridGuo, CF=55228903200en_HK
dc.identifier.scopusauthoridPang, KH=7101856059en_HK
dc.identifier.scopusauthoridLeung, YP=8351421700en_HK

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