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Conference Paper: Modeling the effects of patterning error on MOSFET

TitleModeling the effects of patterning error on MOSFET
Authors
Pun, CHLai, PTWong, AKK
Issue Date2004
Citation
International Conference On Solid-State And Integrated Circuits Technology Proceedings, Icsict, 2004, v. 2, p. 1049-1052 How to Cite?
AbstractDuring IC fabrication, layout shapes do not exactly replicate onto wafers due to distortions in pattern-transfer processes. Conformal mapping is used to give a simple model to estimate the effect of the distortion on the I-V characteristics of MOSFETs. The method is verified by the device simulator DAVINCI. The impact of pattern distortion of MOSFET on circuit performance is also examined by the proposed model. ©2004 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158420
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorPun, CHen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorWong, AKKen_US
dc.date.accessioned2012-08-08T08:59:32Z-
dc.date.available2012-08-08T08:59:32Z-
dc.date.issued2004en_US
dc.identifier.citationInternational Conference On Solid-State And Integrated Circuits Technology Proceedings, Icsict, 2004, v. 2, p. 1049-1052en_US
dc.identifier.urihttp://hdl.handle.net/10722/158420-
dc.description.abstractDuring IC fabrication, layout shapes do not exactly replicate onto wafers due to distortions in pattern-transfer processes. Conformal mapping is used to give a simple model to estimate the effect of the distortion on the I-V characteristics of MOSFETs. The method is verified by the device simulator DAVINCI. The impact of pattern distortion of MOSFET on circuit performance is also examined by the proposed model. ©2004 IEEE.en_US
dc.languageengen_US
dc.relation.ispartofInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICTen_US
dc.titleModeling the effects of patterning error on MOSFETen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-21744452213en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-21744452213&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume2en_US
dc.identifier.spage1049en_US
dc.identifier.epage1052en_US
dc.identifier.scopusauthoridPun, CH=8579744000en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridWong, AKK=7403147663en_US

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