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Conference Paper: Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser

TitleMicromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser
Authors
KeywordsGallium Nitride
Laser Ablation
Led Devices
Sapphire
Issue Date2004
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2004, v. 453-454, p. 462-466 How to Cite?
AbstractGallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices. © 2003 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/158391
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGu, Een_US
dc.contributor.authorJeon, CWen_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorRice, Gen_US
dc.contributor.authorDawson, MDen_US
dc.contributor.authorIlly, EKen_US
dc.contributor.authorKnowles, MRHen_US
dc.date.accessioned2012-08-08T08:59:23Z-
dc.date.available2012-08-08T08:59:23Z-
dc.date.issued2004en_US
dc.identifier.citationThin Solid Films, 2004, v. 453-454, p. 462-466en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/10722/158391-
dc.description.abstractGallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices. © 2003 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.subjectGallium Nitrideen_US
dc.subjectLaser Ablationen_US
dc.subjectLed Devicesen_US
dc.subjectSapphireen_US
dc.titleMicromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laseren_US
dc.typeConference_Paperen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.tsf.2003.11.133en_US
dc.identifier.scopuseid_2-s2.0-1542740508en_US
dc.identifier.hkuros109868-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1542740508&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume453-454en_US
dc.identifier.spage462en_US
dc.identifier.epage466en_US
dc.identifier.isiWOS:000220510900088-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridGu, E=7004420026en_US
dc.identifier.scopusauthoridJeon, CW=7006894315en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridRice, G=7202023230en_US
dc.identifier.scopusauthoridDawson, MD=7203061779en_US
dc.identifier.scopusauthoridIlly, EK=6603592742en_US
dc.identifier.scopusauthoridKnowles, MRH=7101802332en_US

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