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Conference Paper: Efficient GaN-based micro-LED arrays

TitleEfficient GaN-based micro-LED arrays
Authors
Issue Date2002
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 2002, v. 743, p. 433-438 How to Cite?
AbstractHighly efficient, two-dimensional arrays of parallel-addressed InGaN blue micro-LEDs with individual element diameters of 8, 12 and 20μm have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallisation, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have I-V characteristics similar to those of broad-area reference LEDs fabricated from the same wafer, and give superior (3mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.
Persistent Identifierhttp://hdl.handle.net/10722/158358
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorJeon, CWen_US
dc.contributor.authorDawson, MDen_US
dc.contributor.authorEdwards, PRen_US
dc.contributor.authorMartin, RWen_US
dc.date.accessioned2012-08-08T08:59:13Z-
dc.date.available2012-08-08T08:59:13Z-
dc.date.issued2002en_US
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 2002, v. 743, p. 433-438en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/158358-
dc.description.abstractHighly efficient, two-dimensional arrays of parallel-addressed InGaN blue micro-LEDs with individual element diameters of 8, 12 and 20μm have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallisation, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have I-V characteristics similar to those of broad-area reference LEDs fabricated from the same wafer, and give superior (3mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_US
dc.titleEfficient GaN-based micro-LED arraysen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0038033973en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038033973&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume743en_US
dc.identifier.spage433en_US
dc.identifier.epage438en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridJeon, CW=7006894315en_US
dc.identifier.scopusauthoridDawson, MD=7203061779en_US
dc.identifier.scopusauthoridEdwards, PR=7401881875en_US
dc.identifier.scopusauthoridMartin, RW=9742683000en_US

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