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Conference Paper: A study of the decomposition of GaN during annealing over a wide range of temperatures

TitleA study of the decomposition of GaN during annealing over a wide range of temperatures
Authors
Issue Date2002
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 2002, v. 743, p. 731-736 How to Cite?
AbstractAnnealing experiments were carried out on gallium nitride layers, which were grown on sapphire through Metal Organic Chemical Vapor Deposition (MOCVD). Rutherford Backscattering Spectrometry (RBS) was performed on as-grown and annealed GaN samples using a 2 MeV proton beam to study the stoichiometric changes in the near-surface region (750 nm) with depth resolution better than 50 nm. No decomposition was measured for temperatures up to 800°C. Decomposition in the near-surface region increased rapidly with a further increase of temperature, resulting in a near-amorphous surface-region for annealing at 1100°C. The depth profiles of nitrogen and incorporated oxygen in the decomposed GaN are extracted from the nanoscale RBS data for different annealing temperatures. The surface roughness of the GaN layers observed by atomic force microscopy (AFM) is consistent with RBS decomposition measurements. We describe the range of annealing conditions under which negligible decomposition of GaN is observed, which is important in assessing optimal thermal processing conditions of GaN for both conventional and nanoscale optoelectronic devices.
Persistent Identifierhttp://hdl.handle.net/10722/158357
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorRana, MAen_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorBreese, MBHen_US
dc.contributor.authorOsipowicz, Ten_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorWatt, Fen_US
dc.date.accessioned2012-08-08T08:59:13Z-
dc.date.available2012-08-08T08:59:13Z-
dc.date.issued2002en_US
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 2002, v. 743, p. 731-736en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/158357-
dc.description.abstractAnnealing experiments were carried out on gallium nitride layers, which were grown on sapphire through Metal Organic Chemical Vapor Deposition (MOCVD). Rutherford Backscattering Spectrometry (RBS) was performed on as-grown and annealed GaN samples using a 2 MeV proton beam to study the stoichiometric changes in the near-surface region (750 nm) with depth resolution better than 50 nm. No decomposition was measured for temperatures up to 800°C. Decomposition in the near-surface region increased rapidly with a further increase of temperature, resulting in a near-amorphous surface-region for annealing at 1100°C. The depth profiles of nitrogen and incorporated oxygen in the decomposed GaN are extracted from the nanoscale RBS data for different annealing temperatures. The surface roughness of the GaN layers observed by atomic force microscopy (AFM) is consistent with RBS decomposition measurements. We describe the range of annealing conditions under which negligible decomposition of GaN is observed, which is important in assessing optimal thermal processing conditions of GaN for both conventional and nanoscale optoelectronic devices.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_US
dc.titleA study of the decomposition of GaN during annealing over a wide range of temperaturesen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0038033910en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038033910&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume743en_US
dc.identifier.spage731en_US
dc.identifier.epage736en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridRana, MA=7006672846en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridBreese, MBH=7005563036en_US
dc.identifier.scopusauthoridOsipowicz, T=7005277353en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridWatt, F=7102810624en_US

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