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Conference Paper: Dislocation scattering in n-GaN

TitleDislocation scattering in n-GaN
Authors
Issue Date2001
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/mssp
Citation
Materials Science In Semiconductor Processing, 2001, v. 4 n. 6, p. 567-570 How to Cite?
AbstractThe scattering of carriers due to dislocations is studied. Unlike semiconductors such as Si or GaAs, the major scattering mechanism for undoped or lightly doped samples is dislocation scattering instead of ionized impurity scattering. It was found that for GaN samples in the dislocation scattering region, the mobility is a function of the dislocation density and free carrier concentration, via a μdis ∝ √n/Ndis relationship. Temperature-variation mobility plots also indicate that a T3/2 dependence component is present, which is also attributed to dislocation scattering. © 2002 Published by Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/158322
ISSN
2015 Impact Factor: 2.264
2015 SCImago Journal Rankings: 0.577
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorChua, SJen_US
dc.date.accessioned2012-08-08T08:59:04Z-
dc.date.available2012-08-08T08:59:04Z-
dc.date.issued2001en_US
dc.identifier.citationMaterials Science In Semiconductor Processing, 2001, v. 4 n. 6, p. 567-570en_US
dc.identifier.issn1369-8001en_US
dc.identifier.urihttp://hdl.handle.net/10722/158322-
dc.description.abstractThe scattering of carriers due to dislocations is studied. Unlike semiconductors such as Si or GaAs, the major scattering mechanism for undoped or lightly doped samples is dislocation scattering instead of ionized impurity scattering. It was found that for GaN samples in the dislocation scattering region, the mobility is a function of the dislocation density and free carrier concentration, via a μdis ∝ √n/Ndis relationship. Temperature-variation mobility plots also indicate that a T3/2 dependence component is present, which is also attributed to dislocation scattering. © 2002 Published by Elsevier Science Ltd.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/msspen_US
dc.relation.ispartofMaterials Science in Semiconductor Processingen_US
dc.titleDislocation scattering in n-GaNen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S1369-8001(02)00019-7en_US
dc.identifier.scopuseid_2-s2.0-0035574325en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035574325&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume4en_US
dc.identifier.issue6en_US
dc.identifier.spage567en_US
dc.identifier.epage570en_US
dc.identifier.isiWOS:000175066200019-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridZhang, J=16403575100en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US

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