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Conference Paper: InGaAs/InGaAsP diffused quantum wells optical amplifiers and modulators

TitleInGaAs/InGaAsP diffused quantum wells optical amplifiers and modulators
Authors
KeywordsDiffused Quantum Well
Modification Of Quantum Well
Quantum Well Modulator
Quantum-Well Optical Amplifier
Issue Date2001
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2001, v. 4277, p. 69-76 How to Cite?
AbstractDiffused quantum wells (DFQW) optical devices have been widely investigated for use in optical electronics integrated circuits. In this paper, we report on the performance of five-period (200Å In0.53Ga0.47As0.57P0.43 barrier and 60Å In0.53Ga0.47As well) DFQW optical amplifiers and modulators. The results show that the QW amplifiers and modulators maintain at single guiding mode operation after the QW structure has been annealed. The tuning range of the operational wavelength of QW optical amplifiers is 34meV without a significant degradation in the modal gain peak by interdiffusing the QWs. The QW interdiffusion was accomplished by P+ ion implantation to the upper region of the top cladding layer of the multilayer structure and followed by rapid thermal annealing such that the implanted ions did not damage the QW structures. The I-V characteristics of the implanted QW are similar to that of the unimplanted. Concerning the TE electro-absorptive modulation, a large contrast ratio (CR) of 35dB can be obtained at λopn = 1.55μm under a small bias of -1.5V for a 500μm long modulator. For TM mode, a slightly higher CR of 37dB can be obtained at the operation wavelength although the reverse bias voltage is double.
Persistent Identifierhttp://hdl.handle.net/10722/158315
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_US
dc.contributor.authorHe, JJen_US
dc.contributor.authorLi, Men_US
dc.contributor.authorFeng, Yen_US
dc.contributor.authorKoteles, ESen_US
dc.date.accessioned2012-08-08T08:59:02Z-
dc.date.available2012-08-08T08:59:02Z-
dc.date.issued2001en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2001, v. 4277, p. 69-76en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/158315-
dc.description.abstractDiffused quantum wells (DFQW) optical devices have been widely investigated for use in optical electronics integrated circuits. In this paper, we report on the performance of five-period (200Å In0.53Ga0.47As0.57P0.43 barrier and 60Å In0.53Ga0.47As well) DFQW optical amplifiers and modulators. The results show that the QW amplifiers and modulators maintain at single guiding mode operation after the QW structure has been annealed. The tuning range of the operational wavelength of QW optical amplifiers is 34meV without a significant degradation in the modal gain peak by interdiffusing the QWs. The QW interdiffusion was accomplished by P+ ion implantation to the upper region of the top cladding layer of the multilayer structure and followed by rapid thermal annealing such that the implanted ions did not damage the QW structures. The I-V characteristics of the implanted QW are similar to that of the unimplanted. Concerning the TE electro-absorptive modulation, a large contrast ratio (CR) of 35dB can be obtained at λopn = 1.55μm under a small bias of -1.5V for a 500μm long modulator. For TM mode, a slightly higher CR of 37dB can be obtained at the operation wavelength although the reverse bias voltage is double.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.subjectDiffused Quantum Wellen_US
dc.subjectModification Of Quantum Wellen_US
dc.subjectQuantum Well Modulatoren_US
dc.subjectQuantum-Well Optical Amplifieren_US
dc.titleInGaAs/InGaAsP diffused quantum wells optical amplifiers and modulatorsen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, WCH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.426830en_US
dc.identifier.scopuseid_2-s2.0-0034944326en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034944326&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume4277en_US
dc.identifier.spage69en_US
dc.identifier.epage76en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoy, WCH=7006202371en_US
dc.identifier.scopusauthoridHe, JJ=25647744400en_US
dc.identifier.scopusauthoridLi, M=36066563000en_US
dc.identifier.scopusauthoridFeng, Y=34769617600en_US
dc.identifier.scopusauthoridKoteles, ES=35445016000en_US

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