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Conference Paper: Spreading-resistance temperature sensor on thin-film SOI

TitleSpreading-resistance temperature sensor on thin-film SOI
Authors
Li, BLai, PTSin, JKO
Issue Date2001
Citation
Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 2001, p. 75-78 How to Cite?
AbstractSpreading-resistance temperature (SRT) sensor on thin-film SOI is investigated with emphasis on its resistance versus temperature (R-T) characteristics. The effect of Si-film thickness on the maximum operating temperature (Tmax) is simulated and verified by experimental results. Thin-film SOI SRT sensor not only achieves promising device characteristics, but also shows that its bias current can be as low as 1 μA, which is 1,000 times lower than that of bulk Si SRT sensor. Therefore, SRT sensor on thin-film SOI can cover a wide scope of low-power applications.
Persistent Identifierhttp://hdl.handle.net/10722/158311
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, Ben_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorSin, JKOen_US
dc.date.accessioned2012-08-08T08:59:01Z-
dc.date.available2012-08-08T08:59:01Z-
dc.date.issued2001en_US
dc.identifier.citationProceedings Of The Ieee Hong Kong Electron Devices Meeting, 2001, p. 75-78en_US
dc.identifier.urihttp://hdl.handle.net/10722/158311-
dc.description.abstractSpreading-resistance temperature (SRT) sensor on thin-film SOI is investigated with emphasis on its resistance versus temperature (R-T) characteristics. The effect of Si-film thickness on the maximum operating temperature (Tmax) is simulated and verified by experimental results. Thin-film SOI SRT sensor not only achieves promising device characteristics, but also shows that its bias current can be as low as 1 μA, which is 1,000 times lower than that of bulk Si SRT sensor. Therefore, SRT sensor on thin-film SOI can cover a wide scope of low-power applications.en_US
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meetingen_US
dc.titleSpreading-resistance temperature sensor on thin-film SOIen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0034829283en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034829283&selection=ref&src=s&origin=recordpageen_US
dc.identifier.spage75en_US
dc.identifier.epage78en_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridSin, JKO=7103312667en_US

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