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Conference Paper: Interface properties of N2O-annealed SiO2/SiC system

TitleInterface properties of N2O-annealed SiO2/SiC system
Authors
Chakraborty, SupraticLai, PTChan, CLCheng, YC
Issue Date2000
Citation
Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 108-111 How to Cite?
AbstractThe electrical properties of dry-oxidized, N2O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N2O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N2O nitridation improves the hardness of SiO2/n-type SiC interface and the oxide quality under high-field stress.
Persistent Identifierhttp://hdl.handle.net/10722/158300

 

DC FieldValueLanguage
dc.contributor.authorChakraborty, Supraticen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorChan, CLen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:58:58Z-
dc.date.available2012-08-08T08:58:58Z-
dc.date.issued2000en_US
dc.identifier.citationProceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 108-111en_US
dc.identifier.urihttp://hdl.handle.net/10722/158300-
dc.description.abstractThe electrical properties of dry-oxidized, N2O-annealed n-type 6H-SiC metal-oxide-semiconductor (MOS) capacitors are investigated at room temperature. As compared to conventional dry-oxidized device, although the N2O-annealed device has higher oxide-charge density, it shows smaller increase in interface-state density under high-field stress. On the other hand, the stress measurements indicate that dry-oxidized device has fewer pre-existing acceptor-type interface states and oxide traps. In summary, N2O nitridation improves the hardness of SiO2/n-type SiC interface and the oxide quality under high-field stress.en_US
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meetingen_US
dc.titleInterface properties of N2O-annealed SiO2/SiC systemen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0034482248en_US
dc.identifier.spage108en_US
dc.identifier.epage111en_US
dc.identifier.scopusauthoridChakraborty, Supratic=35577738500en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridChan, CL=8507083700en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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