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Conference Paper: Improved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells cladding

TitleImproved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells cladding
Authors
Issue Date2000
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 2000, v. 618, p. 213-218 How to Cite?
AbstractA GaAs/AlGaAs laser structure with multi-quantum-well cladding layer has been employed to investigate the group III interdiffusion. With this structure the photoluminescence (PL) signals from both the top C doped cladding layers and the laser active region quantum wells can be observed simultaneously. In contrast to the depth dependence of the group III vacancy enhanced interdiffusion, the quantum wells in the thick top cladding layer showed a uniform layer intermixing and the extent of intermixing was less than that observed in the quantum wells of the laser active region. The Al-Ga interdiffusion coefficient, D Al-Ga, of the cladding layer is about 4 times less than that of the active region. A more efficient carrier transport from the cladding layer to the active region in the intermixed sample was deduced from the temperature varied PL spectra. The built-in electric field is proposed to enhance the vacancy diffusion in the active region.
Persistent Identifierhttp://hdl.handle.net/10722/158291
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorTeng, JHen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorLiu, Wen_US
dc.contributor.authorWang, XCen_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorDong, JRen_US
dc.contributor.authorLi, Gen_US
dc.contributor.authorBraddoc, Den_US
dc.date.accessioned2012-08-08T08:58:55Z-
dc.date.available2012-08-08T08:58:55Z-
dc.date.issued2000en_US
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 2000, v. 618, p. 213-218en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/158291-
dc.description.abstractA GaAs/AlGaAs laser structure with multi-quantum-well cladding layer has been employed to investigate the group III interdiffusion. With this structure the photoluminescence (PL) signals from both the top C doped cladding layers and the laser active region quantum wells can be observed simultaneously. In contrast to the depth dependence of the group III vacancy enhanced interdiffusion, the quantum wells in the thick top cladding layer showed a uniform layer intermixing and the extent of intermixing was less than that observed in the quantum wells of the laser active region. The Al-Ga interdiffusion coefficient, D Al-Ga, of the cladding layer is about 4 times less than that of the active region. A more efficient carrier transport from the cladding layer to the active region in the intermixed sample was deduced from the temperature varied PL spectra. The built-in electric field is proposed to enhance the vacancy diffusion in the active region.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_US
dc.titleImproved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells claddingen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0034449284en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034449284&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume618en_US
dc.identifier.spage213en_US
dc.identifier.epage218en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridTeng, JH=7202560065en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridLiu, W=36078712200en_US
dc.identifier.scopusauthoridWang, XC=8527523100en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridDong, JR=8141244200en_US
dc.identifier.scopusauthoridLi, G=25422502200en_US
dc.identifier.scopusauthoridBraddoc, D=6504025451en_US

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