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Conference Paper: Disorder-delineated AlGaAs/GaAs quantum-well phase modulator

TitleDisorder-delineated AlGaAs/GaAs quantum-well phase modulator
Authors
Issue Date1997
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 1997, v. 484, p. 453-458 How to Cite?
AbstractModeling is used to investigate waveguide phase modulators, with 0.5 μm and 1 μm quantum well active regions which are defined by implantation induced disordering. By controlling the extent of the interdiffusion in the lateral claddings, the refractive index difference between the core and claddings is used to provide single mode operation. The performance of the phase modulator is studied in terms of optical confinement, phase change per unit voltage per unit length, chirping property and absorption loss. Our result shows that the 0.5 μm one is a more efficient structure and its absorption loss can be reduced by increasing the applied field from 50 kV/cm to 100 kV/cm.
Persistent Identifierhttp://hdl.handle.net/10722/158239
ISSN

 

DC FieldValueLanguage
dc.contributor.authorChoy, Wallace CHen_US
dc.contributor.authorWeiss, Bernard Len_US
dc.date.accessioned2012-08-08T08:58:41Z-
dc.date.available2012-08-08T08:58:41Z-
dc.date.issued1997en_US
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 1997, v. 484, p. 453-458en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/158239-
dc.description.abstractModeling is used to investigate waveguide phase modulators, with 0.5 μm and 1 μm quantum well active regions which are defined by implantation induced disordering. By controlling the extent of the interdiffusion in the lateral claddings, the refractive index difference between the core and claddings is used to provide single mode operation. The performance of the phase modulator is studied in terms of optical confinement, phase change per unit voltage per unit length, chirping property and absorption loss. Our result shows that the 0.5 μm one is a more efficient structure and its absorption loss can be reduced by increasing the applied field from 50 kV/cm to 100 kV/cm.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_US
dc.titleDisorder-delineated AlGaAs/GaAs quantum-well phase modulatoren_US
dc.typeConference_Paperen_US
dc.identifier.emailChoy, Wallace CH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, Wallace CH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031389344en_US
dc.identifier.volume484en_US
dc.identifier.spage453en_US
dc.identifier.epage458en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoy, Wallace CH=7006202371en_US
dc.identifier.scopusauthoridWeiss, Bernard L=7402309717en_US

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