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Conference Paper: Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH3 and N2O nitrided MOSFETs

TitleEffects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH3 and N2O nitrided MOSFETs
Authors
Wang, WSurya, CharlesLai, PT
Issue Date1997
Citation
Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 1997, p. 98-101 How to Cite?
AbstractLow-frequency noise in n-channel MOSFETs was studied over a wide range of temperatures and biases. The devices were subjected to nitridation by annealing in NH3 and N2O which were subsequently gettered by low-energy Ar+ ranging from 10 minutes to 40 minutes. The noise spectra for devices with different gettering times are compared to the ungettered devices. It is found that, for both types of devices, flicker noise is reduced by backsurface gettering for short gettering times. The low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
Persistent Identifierhttp://hdl.handle.net/10722/158238

 

DC FieldValueLanguage
dc.contributor.authorWang, Wen_US
dc.contributor.authorSurya, Charlesen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:58:41Z-
dc.date.available2012-08-08T08:58:41Z-
dc.date.issued1997en_US
dc.identifier.citationProceedings Of The Ieee Hong Kong Electron Devices Meeting, 1997, p. 98-101en_US
dc.identifier.urihttp://hdl.handle.net/10722/158238-
dc.description.abstractLow-frequency noise in n-channel MOSFETs was studied over a wide range of temperatures and biases. The devices were subjected to nitridation by annealing in NH3 and N2O which were subsequently gettered by low-energy Ar+ ranging from 10 minutes to 40 minutes. The noise spectra for devices with different gettering times are compared to the ungettered devices. It is found that, for both types of devices, flicker noise is reduced by backsurface gettering for short gettering times. The low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.en_US
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meetingen_US
dc.titleEffects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH3 and N2O nitrided MOSFETsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031388418en_US
dc.identifier.spage98en_US
dc.identifier.epage101en_US
dc.identifier.scopusauthoridWang, W=7501758811en_US
dc.identifier.scopusauthoridSurya, Charles=7003939256en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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