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Conference Paper: Effects of backsurface Ar+ bombardment on n-MOSFET's with nitride gate oxides

TitleEffects of backsurface Ar+ bombardment on n-MOSFET's with nitride gate oxides
Authors
Lai, PTZeng, XLi, GQNg, WT
Issue Date1997
Citation
Ieee International Conference On Semiconductor Electronics, Proceedings, Icse, 1997, p. 93-96 How to Cite?
AbstractLow energy (550 eV) argon-ion beam was used to bombard directly the backsurface of n-MOSFET's with nitrided gate dielectric after the completion of all conventional processing steps. The sub-threshold characteristics, saturation drain current and electrical stability under hot-carrier stress of the MOS devices were shown to be improved under suitable treatments. The mechanism of stress relief at the Si/oxynitride interface was proposed to account for the improvements.
Persistent Identifierhttp://hdl.handle.net/10722/158206

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorZeng, Xen_US
dc.contributor.authorLi, GQen_US
dc.contributor.authorNg, WTen_US
dc.date.accessioned2012-08-08T08:58:32Z-
dc.date.available2012-08-08T08:58:32Z-
dc.date.issued1997en_US
dc.identifier.citationIeee International Conference On Semiconductor Electronics, Proceedings, Icse, 1997, p. 93-96en_US
dc.identifier.urihttp://hdl.handle.net/10722/158206-
dc.description.abstractLow energy (550 eV) argon-ion beam was used to bombard directly the backsurface of n-MOSFET's with nitrided gate dielectric after the completion of all conventional processing steps. The sub-threshold characteristics, saturation drain current and electrical stability under hot-carrier stress of the MOS devices were shown to be improved under suitable treatments. The mechanism of stress relief at the Si/oxynitride interface was proposed to account for the improvements.en_US
dc.languageengen_US
dc.relation.ispartofIEEE International Conference on Semiconductor Electronics, Proceedings, ICSEen_US
dc.titleEffects of backsurface Ar+ bombardment on n-MOSFET's with nitride gate oxidesen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0030688235en_US
dc.identifier.spage93en_US
dc.identifier.epage96en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridZeng, X=7403248314en_US
dc.identifier.scopusauthoridLi, GQ=7407050307en_US
dc.identifier.scopusauthoridNg, WT=7401613512en_US

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