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Conference Paper: Effects of nitridation and re-oxidation on drain leakage current in n-channel MOSFETs

TitleEffects of nitridation and re-oxidation on drain leakage current in n-channel MOSFETs
Authors
Fleischer, SLiu, ZHLai, PTMa, ZJCheng, YC
Issue Date1990
Citation
Conference On Solid State Devices And Materials, 1990, p. 1153-1154 How to Cite?
AbstractThe effects of nitridation and reoxidation on the subthreshold draincurrent in n-channel MOSFET's have been investigated. As an alternative to rapid thermal processing (RTP) we have studied low partial pressure nitridation with dilutions of 1:10 (10% ammonia: 90% nitrogen). Devices had both a channel width and a channel length of 20um, and a gate dielectric thickness of 10nm. Subthreshold chracteristics were measured in a pure nitrogen ambient under light proof and shielded conditions using and Hp41145B Semiconductor Parameter analyzer. Drain current (ID) versus gate voltage (VG) curves were extracted (for VDS=50mV) and the threshold voltage (VT) was taken to be the value of VG at ID=10$+$min7$/A.
Persistent Identifierhttp://hdl.handle.net/10722/158070

 

DC FieldValueLanguage
dc.contributor.authorFleischer, Sen_US
dc.contributor.authorLiu, ZHen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorMa, ZJen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:57:57Z-
dc.date.available2012-08-08T08:57:57Z-
dc.date.issued1990en_US
dc.identifier.citationConference On Solid State Devices And Materials, 1990, p. 1153-1154en_US
dc.identifier.urihttp://hdl.handle.net/10722/158070-
dc.description.abstractThe effects of nitridation and reoxidation on the subthreshold draincurrent in n-channel MOSFET's have been investigated. As an alternative to rapid thermal processing (RTP) we have studied low partial pressure nitridation with dilutions of 1:10 (10% ammonia: 90% nitrogen). Devices had both a channel width and a channel length of 20um, and a gate dielectric thickness of 10nm. Subthreshold chracteristics were measured in a pure nitrogen ambient under light proof and shielded conditions using and Hp41145B Semiconductor Parameter analyzer. Drain current (ID) versus gate voltage (VG) curves were extracted (for VDS=50mV) and the threshold voltage (VT) was taken to be the value of VG at ID=10$+$min7$/A.en_US
dc.languageengen_US
dc.relation.ispartofConference on Solid State Devices and Materialsen_US
dc.titleEffects of nitridation and re-oxidation on drain leakage current in n-channel MOSFETsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0025539094en_US
dc.identifier.spage1153en_US
dc.identifier.epage1154en_US
dc.identifier.scopusauthoridFleischer, S=7103394445en_US
dc.identifier.scopusauthoridLiu, ZH=7406683158en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridMa, ZJ=7403600924en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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