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Conference Paper: SIMULATION OF POWER TRANSISTOR IN ITS CIRCUIT ENVIRONMENT.

TitleSIMULATION OF POWER TRANSISTOR IN ITS CIRCUIT ENVIRONMENT.
Authors
Pong, MHJackson, RD
Issue Date1985
Citation
Conference Record - Ias Annual Meeting (Ieee Industry Applications Society), 1985, p. 894-899 How to Cite?
AbstractThe Gummel-Poon charge controlled bipolar junction transistor model and the diode model are applied to power electronic device simulations. Methods for determination of the parameters of the charge controlled transistor model and the diode model are presented. Emphasis is on parameters which are important in power semiconductor devices. The inherent transistor and diode models in the program SPICE2 are used for the simulation. A nonlinear voltage source is added in series with the diode model to provide forward recovery modeling. The parameter determination methods are used to simulate the MEDL power transistor DT100, which is a 1000-V, 200-A device. The simulated device characteristics and the manufacturer supplied device characteristics are compared.
Persistent Identifierhttp://hdl.handle.net/10722/157990
ISSN
0197-2618
2023 SCImago Journal Rankings: 0.422

 

DC FieldValueLanguage
dc.contributor.authorPong, MHen_US
dc.contributor.authorJackson, RDen_US
dc.date.accessioned2012-08-08T08:57:36Z-
dc.date.available2012-08-08T08:57:36Z-
dc.date.issued1985en_US
dc.identifier.citationConference Record - Ias Annual Meeting (Ieee Industry Applications Society), 1985, p. 894-899en_US
dc.identifier.issn0197-2618en_US
dc.identifier.urihttp://hdl.handle.net/10722/157990-
dc.description.abstractThe Gummel-Poon charge controlled bipolar junction transistor model and the diode model are applied to power electronic device simulations. Methods for determination of the parameters of the charge controlled transistor model and the diode model are presented. Emphasis is on parameters which are important in power semiconductor devices. The inherent transistor and diode models in the program SPICE2 are used for the simulation. A nonlinear voltage source is added in series with the diode model to provide forward recovery modeling. The parameter determination methods are used to simulate the MEDL power transistor DT100, which is a 1000-V, 200-A device. The simulated device characteristics and the manufacturer supplied device characteristics are compared.en_US
dc.languageengen_US
dc.relation.ispartofConference Record - IAS Annual Meeting (IEEE Industry Applications Society)en_US
dc.titleSIMULATION OF POWER TRANSISTOR IN ITS CIRCUIT ENVIRONMENT.en_US
dc.typeConference_Paperen_US
dc.identifier.emailPong, MH:mhp@eee.hku.hken_US
dc.identifier.authorityPong, MH=rp00163en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0022229590en_US
dc.identifier.spage894en_US
dc.identifier.epage899en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridPong, MH=7003449364en_US
dc.identifier.scopusauthoridJackson, RD=7404310111en_US
dc.identifier.issnl0197-2618-

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