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Article: The influence of mechanical and electrical interfacial conditions on threshold field of ferroelectric nanothin films

TitleThe influence of mechanical and electrical interfacial conditions on threshold field of ferroelectric nanothin films
Authors
KeywordsFerroelectric
Interfacial Condition
Phase Field Method
Thin Film
Threshold Field
Issue Date2012
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/fml/
Citation
Functional Materials Letters, 2012, v. 5 n. 1 How to Cite?
AbstractThe influence of mechanical and electrical interfacial conditions on the threshold field of ferroelectric nanothin films has been studied by employing GinzburgLandau theory and the phase field method. The results obtained show that the threshold field of the ferroelectric thin film increased with increasing compressive misfit strain and extrapolation length. This was because the said factors increased the energy barrier for domain wall motion by affecting the elastic and depolarization fields in the film. These results are useful for the manufacture and application of micro-electromechanical-systems including ferroelectric thin films. © 2012 World Scientific Publishing Company.
Persistent Identifierhttp://hdl.handle.net/10722/157192
ISSN
2015 Impact Factor: 1.333
2015 SCImago Journal Rankings: 0.392
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhao, XFen_US
dc.contributor.authorSoh, AKen_US
dc.date.accessioned2012-08-08T08:45:45Z-
dc.date.available2012-08-08T08:45:45Z-
dc.date.issued2012en_US
dc.identifier.citationFunctional Materials Letters, 2012, v. 5 n. 1en_US
dc.identifier.issn1793-6047en_US
dc.identifier.urihttp://hdl.handle.net/10722/157192-
dc.description.abstractThe influence of mechanical and electrical interfacial conditions on the threshold field of ferroelectric nanothin films has been studied by employing GinzburgLandau theory and the phase field method. The results obtained show that the threshold field of the ferroelectric thin film increased with increasing compressive misfit strain and extrapolation length. This was because the said factors increased the energy barrier for domain wall motion by affecting the elastic and depolarization fields in the film. These results are useful for the manufacture and application of micro-electromechanical-systems including ferroelectric thin films. © 2012 World Scientific Publishing Company.en_US
dc.languageengen_US
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/fml/en_US
dc.relation.ispartofFunctional Materials Lettersen_US
dc.subjectFerroelectricen_US
dc.subjectInterfacial Conditionen_US
dc.subjectPhase Field Methoden_US
dc.subjectThin Filmen_US
dc.subjectThreshold Fielden_US
dc.titleThe influence of mechanical and electrical interfacial conditions on threshold field of ferroelectric nanothin filmsen_US
dc.typeArticleen_US
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_US
dc.identifier.authoritySoh, AK=rp00170en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1142/S1793604712500130en_US
dc.identifier.scopuseid_2-s2.0-84860123950en_US
dc.identifier.hkuros200544-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84860123950&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume5en_US
dc.identifier.issue1en_US
dc.identifier.isiWOS:000303209800014-
dc.publisher.placeSingaporeen_US
dc.identifier.scopusauthoridZhao, XF=8235714200en_US
dc.identifier.scopusauthoridSoh, AK=7006795203en_US

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