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Article: Low power flexible organic thin film transistors with amorphous Ba0.7Sr0.3TiO3 gate dielectric grown by pulsed laser deposition at low temperature

TitleLow power flexible organic thin film transistors with amorphous Ba0.7Sr0.3TiO3 gate dielectric grown by pulsed laser deposition at low temperature
Authors
KeywordsBending radius
Dielectric thin films
High-k dielectric
Low operating power
Low power
Issue Date2012
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgel
Citation
Organic Electronics, 2012, v. 13 n. 7, p. 1223-1228 How to Cite?
AbstractWe deposited amorphous Ba0.7Sr0.3TiO3 (BST) on silicon and plastic substrate under 110 °C by pulsed laser deposition (PLD) and use it as the dielectric of the organic transistor. Depends on the thickness of BST layer, the highest mobility of the devices can achieve 1.24 cm 2 V -1 s -1 and 1.01 cm 2 V -1 s -1 on the silicon and polyethylene naphthalate (PEN) substrate, respectively. We also studied the upward and downward bending tests on the transistors and the dielectric thin films. We found that the BST dielectric pentacene transistor can maintain the mobility at 0.5 cm 2 V -1 s -1 or higher while the bending radius is around 3 mm in both upward and downward bending. Our finding demonstrates the potential application of PLD growth high-k dielectric in the large area organic electronics devices. © 2012 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/157190
ISSN
2015 Impact Factor: 3.471
2015 SCImago Journal Rankings: 1.215
ISI Accession Number ID
Funding AgencyGrant Number
HKU201109159013
J-BB9P
Funding Information:

The work is supported by HKU (Code: 201109159013) and Poly (Code: J-BB9P).

References

 

DC FieldValueLanguage
dc.contributor.authorWang, ZRen_US
dc.contributor.authorXin, JZen_US
dc.contributor.authorRen, XCen_US
dc.contributor.authorWang, XLen_US
dc.contributor.authorLeung, CWen_US
dc.contributor.authorShi, SQen_US
dc.contributor.authorRuotolo, Aen_US
dc.contributor.authorChan, PKLen_US
dc.date.accessioned2012-08-08T08:45:44Z-
dc.date.available2012-08-08T08:45:44Z-
dc.date.issued2012en_US
dc.identifier.citationOrganic Electronics, 2012, v. 13 n. 7, p. 1223-1228en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://hdl.handle.net/10722/157190-
dc.description.abstractWe deposited amorphous Ba0.7Sr0.3TiO3 (BST) on silicon and plastic substrate under 110 °C by pulsed laser deposition (PLD) and use it as the dielectric of the organic transistor. Depends on the thickness of BST layer, the highest mobility of the devices can achieve 1.24 cm 2 V -1 s -1 and 1.01 cm 2 V -1 s -1 on the silicon and polyethylene naphthalate (PEN) substrate, respectively. We also studied the upward and downward bending tests on the transistors and the dielectric thin films. We found that the BST dielectric pentacene transistor can maintain the mobility at 0.5 cm 2 V -1 s -1 or higher while the bending radius is around 3 mm in both upward and downward bending. Our finding demonstrates the potential application of PLD growth high-k dielectric in the large area organic electronics devices. © 2012 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgelen_US
dc.relation.ispartofOrganic Electronicsen_US
dc.subjectBending radiusen_US
dc.subjectDielectric thin filmsen_US
dc.subjectHigh-k dielectricen_US
dc.subjectLow operating poweren_US
dc.subjectLow poweren_US
dc.titleLow power flexible organic thin film transistors with amorphous Ba0.7Sr0.3TiO3 gate dielectric grown by pulsed laser deposition at low temperatureen_US
dc.typeArticleen_US
dc.identifier.emailLeung, CW: Dennis.Leung@inet.polyu.edu.hken_US
dc.identifier.emailShi, SQ: mmsqshi@inet.polyu.edu.hk-
dc.identifier.emailChan, PKL: pklc@hku.hk-
dc.identifier.authorityChan, PKL=rp01532en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.orgel.2012.03.027en_US
dc.identifier.scopuseid_2-s2.0-84859935314en_US
dc.identifier.hkuros202973-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84859935314&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume13en_US
dc.identifier.issue7en_US
dc.identifier.spage1223en_US
dc.identifier.epage1228en_US
dc.identifier.eissn1878-5530-
dc.identifier.isiWOS:000303917100016-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridChan, PKL=35742829700en_US
dc.identifier.scopusauthoridRuotolo, A=8587362900en_US
dc.identifier.scopusauthoridShi, SQ=7402200920en_US
dc.identifier.scopusauthoridLeung, CW=55192281000en_US
dc.identifier.scopusauthoridWang, XL=54901873000en_US
dc.identifier.scopusauthoridRen, XC=37666062300en_US
dc.identifier.scopusauthoridXin, JZ=35730469800en_US
dc.identifier.scopusauthoridWang, ZR=55192577000en_US
dc.identifier.citeulike10605868-

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