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Article: Influence of dipole defects on polarization switching in the vicinity of a crack in relaxor ferroelectrics

TitleInfluence of dipole defects on polarization switching in the vicinity of a crack in relaxor ferroelectrics
Authors
KeywordsDipole Defect
Edge Crack
Phase-Field Method
Polarization Switching
Relaxor Ferroelectrics
Issue Date2010
PublisherTaylor & Francis Ltd. The Journal's web site is located at http://www.tandf.co.uk/journals/titles/09500839.asp
Citation
Philosophical Magazine Letters, 2010, v. 90 n. 4, p. 251-260 How to Cite?
AbstractSimulations of the polarization switching process near the tip of an edge crack in relaxor ferroelectrics subjected to external electric field have been carried out by employing the time-dependent Ginzburg-Landau theory and the phase-field method. The electric boundary conditions of the crack and the material are assumed to be impermeable and isotropic, respectively. The interaction between dipole defects and the crack and the influence of the dipole defect concentration on the switching process are discussed. The results obtained show that, in relaxor materials, polarization switching in the vicinity of the crack tip is suppressed, and the electric field distribution is not symmetric with respect to the crack surface. These results arise on account of the interaction between dipole defects and the crack and the inhomogeneous electric field induced by dipole defects. Moreover, the polarization switching rate and switching zone area decrease with an increase of dipole defect concentration.
Persistent Identifierhttp://hdl.handle.net/10722/157067
ISSN
2015 Impact Factor: 0.918
2015 SCImago Journal Rankings: 0.770
ISI Accession Number ID
Funding AgencyGrant Number
Research Grants Council of Hong Kong Special Administrative Region, ChinaHKU 716007E
HKU 716508E
Funding Information:

Support from the Research Grants Council of Hong Kong Special Administrative Region, China ( Project Nos HKU 716007E and HKU 716508E), is acknowledged.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorZhao, XFen_US
dc.contributor.authorSoh, AKen_US
dc.contributor.authorLi, Len_US
dc.contributor.authorLiu, JXen_US
dc.date.accessioned2012-08-08T08:45:11Z-
dc.date.available2012-08-08T08:45:11Z-
dc.date.issued2010en_US
dc.identifier.citationPhilosophical Magazine Letters, 2010, v. 90 n. 4, p. 251-260en_US
dc.identifier.issn0950-0839en_US
dc.identifier.urihttp://hdl.handle.net/10722/157067-
dc.description.abstractSimulations of the polarization switching process near the tip of an edge crack in relaxor ferroelectrics subjected to external electric field have been carried out by employing the time-dependent Ginzburg-Landau theory and the phase-field method. The electric boundary conditions of the crack and the material are assumed to be impermeable and isotropic, respectively. The interaction between dipole defects and the crack and the influence of the dipole defect concentration on the switching process are discussed. The results obtained show that, in relaxor materials, polarization switching in the vicinity of the crack tip is suppressed, and the electric field distribution is not symmetric with respect to the crack surface. These results arise on account of the interaction between dipole defects and the crack and the inhomogeneous electric field induced by dipole defects. Moreover, the polarization switching rate and switching zone area decrease with an increase of dipole defect concentration.en_US
dc.languageengen_US
dc.publisherTaylor & Francis Ltd. The Journal's web site is located at http://www.tandf.co.uk/journals/titles/09500839.aspen_US
dc.relation.ispartofPhilosophical Magazine Lettersen_US
dc.subjectDipole Defecten_US
dc.subjectEdge Cracken_US
dc.subjectPhase-Field Methoden_US
dc.subjectPolarization Switchingen_US
dc.subjectRelaxor Ferroelectricsen_US
dc.titleInfluence of dipole defects on polarization switching in the vicinity of a crack in relaxor ferroelectricsen_US
dc.typeArticleen_US
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_US
dc.identifier.authoritySoh, AK=rp00170en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1080/09500831003630757en_US
dc.identifier.scopuseid_2-s2.0-77951211311en_US
dc.identifier.hkuros171047-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77951211311&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume90en_US
dc.identifier.issue4en_US
dc.identifier.spage251en_US
dc.identifier.epage260en_US
dc.identifier.isiWOS:000276170000004-
dc.publisher.placeUnited Kingdomen_US
dc.relation.projectDevelopment and application of a novel mesoscopic theory for the study of semiconducting ferroelectrics with crystal defects-
dc.relation.projectMesoscopic study of magnetoelectroelastic coupling in multiferroic materials-
dc.identifier.scopusauthoridZhao, XF=8235714200en_US
dc.identifier.scopusauthoridSoh, AK=7006795203en_US
dc.identifier.scopusauthoridLi, L=36071819700en_US
dc.identifier.scopusauthoridLiu, JX=36063914500en_US

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