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Article: Molecular dynamics simulations of glide dislocations induced by misfit dislocations at the Ni/Al interface
Title | Molecular dynamics simulations of glide dislocations induced by misfit dislocations at the Ni/Al interface | ||||||
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Authors | |||||||
Keywords | Glide Dislocation Interface Misfit Dislocation Molecular Dynamics | ||||||
Issue Date | 2010 | ||||||
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/commatsci | ||||||
Citation | Computational Materials Science, 2010, v. 48 n. 3, p. 551-555 How to Cite? | ||||||
Abstract | 3D molecular dynamics simulations were employed to investigate the influence of misfit dislocations of Ni-Al interface on glide dislocations under uniaxial loading for some specific crystallographic orientations. The simulation results show that the glide dislocations nucleated from the interface were dependent on the misfit dislocation structure at the Ni-Al interface. Square, disordered and polyline types of dislocations were observed at Al(0 0 1)/Ni(0 0 1), Al(0 0 1)/Ni(1 1 0) and Al(0 0 1)/Ni(1 1 1) interface, respectively. Moreover, under uniaxial loading, glide dislocations were induced from the line of misfit dislocations at the interface, and due to the hard-soft interface structure, glide dislocations were only observed in Al. Glide dislocations mainly occurred on {1 1 1} planes, and when these dislocation planes expanded they might collide with each other. © 2010 Elsevier B.V. All rights reserved. | ||||||
Persistent Identifier | http://hdl.handle.net/10722/157065 | ||||||
ISSN | 2023 Impact Factor: 3.1 2023 SCImago Journal Rankings: 0.741 | ||||||
ISI Accession Number ID |
Funding Information: This work was financially supported by National Science Found of China (Grant Nos. 10702058 and 10702059) and China Postdoctoral Science Foundation (Grant No. 20090451100). | ||||||
References |
DC Field | Value | Language |
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dc.contributor.author | Zheng, DL | en_US |
dc.contributor.author | Chen, SD | en_US |
dc.contributor.author | Soh, AK | en_US |
dc.contributor.author | Ma, Y | en_US |
dc.date.accessioned | 2012-08-08T08:45:11Z | - |
dc.date.available | 2012-08-08T08:45:11Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.citation | Computational Materials Science, 2010, v. 48 n. 3, p. 551-555 | en_US |
dc.identifier.issn | 0927-0256 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/157065 | - |
dc.description.abstract | 3D molecular dynamics simulations were employed to investigate the influence of misfit dislocations of Ni-Al interface on glide dislocations under uniaxial loading for some specific crystallographic orientations. The simulation results show that the glide dislocations nucleated from the interface were dependent on the misfit dislocation structure at the Ni-Al interface. Square, disordered and polyline types of dislocations were observed at Al(0 0 1)/Ni(0 0 1), Al(0 0 1)/Ni(1 1 0) and Al(0 0 1)/Ni(1 1 1) interface, respectively. Moreover, under uniaxial loading, glide dislocations were induced from the line of misfit dislocations at the interface, and due to the hard-soft interface structure, glide dislocations were only observed in Al. Glide dislocations mainly occurred on {1 1 1} planes, and when these dislocation planes expanded they might collide with each other. © 2010 Elsevier B.V. All rights reserved. | en_US |
dc.language | eng | en_US |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/commatsci | en_US |
dc.relation.ispartof | Computational Materials Science | en_US |
dc.subject | Glide Dislocation | en_US |
dc.subject | Interface | en_US |
dc.subject | Misfit Dislocation | en_US |
dc.subject | Molecular Dynamics | en_US |
dc.title | Molecular dynamics simulations of glide dislocations induced by misfit dislocations at the Ni/Al interface | en_US |
dc.type | Article | en_US |
dc.identifier.email | Soh, AK:aksoh@hkucc.hku.hk | en_US |
dc.identifier.authority | Soh, AK=rp00170 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/j.commatsci.2010.02.022 | en_US |
dc.identifier.scopus | eid_2-s2.0-77950945154 | en_US |
dc.identifier.hkuros | 171045 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-77950945154&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 48 | en_US |
dc.identifier.issue | 3 | en_US |
dc.identifier.spage | 551 | en_US |
dc.identifier.epage | 555 | en_US |
dc.identifier.isi | WOS:000277932700015 | - |
dc.publisher.place | Netherlands | en_US |
dc.identifier.scopusauthorid | Zheng, DL=36005064400 | en_US |
dc.identifier.scopusauthorid | Chen, SD=15077853600 | en_US |
dc.identifier.scopusauthorid | Soh, AK=7006795203 | en_US |
dc.identifier.scopusauthorid | Ma, Y=27170420200 | en_US |
dc.identifier.citeulike | 6863852 | - |
dc.identifier.issnl | 0927-0256 | - |