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Article: Molecular dynamics simulations of glide dislocations induced by misfit dislocations at the Ni/Al interface

TitleMolecular dynamics simulations of glide dislocations induced by misfit dislocations at the Ni/Al interface
Authors
KeywordsGlide Dislocation
Interface
Misfit Dislocation
Molecular Dynamics
Issue Date2010
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/commatsci
Citation
Computational Materials Science, 2010, v. 48 n. 3, p. 551-555 How to Cite?
Abstract3D molecular dynamics simulations were employed to investigate the influence of misfit dislocations of Ni-Al interface on glide dislocations under uniaxial loading for some specific crystallographic orientations. The simulation results show that the glide dislocations nucleated from the interface were dependent on the misfit dislocation structure at the Ni-Al interface. Square, disordered and polyline types of dislocations were observed at Al(0 0 1)/Ni(0 0 1), Al(0 0 1)/Ni(1 1 0) and Al(0 0 1)/Ni(1 1 1) interface, respectively. Moreover, under uniaxial loading, glide dislocations were induced from the line of misfit dislocations at the interface, and due to the hard-soft interface structure, glide dislocations were only observed in Al. Glide dislocations mainly occurred on {1 1 1} planes, and when these dislocation planes expanded they might collide with each other. © 2010 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/157065
ISSN
2015 Impact Factor: 2.086
2015 SCImago Journal Rankings: 1.037
ISI Accession Number ID
Funding AgencyGrant Number
National Science Found of China10702058
10702059
China Postdoctoral Science Foundation20090451100
Funding Information:

This work was financially supported by National Science Found of China (Grant Nos. 10702058 and 10702059) and China Postdoctoral Science Foundation (Grant No. 20090451100).

References

 

DC FieldValueLanguage
dc.contributor.authorZheng, DLen_US
dc.contributor.authorChen, SDen_US
dc.contributor.authorSoh, AKen_US
dc.contributor.authorMa, Yen_US
dc.date.accessioned2012-08-08T08:45:11Z-
dc.date.available2012-08-08T08:45:11Z-
dc.date.issued2010en_US
dc.identifier.citationComputational Materials Science, 2010, v. 48 n. 3, p. 551-555en_US
dc.identifier.issn0927-0256en_US
dc.identifier.urihttp://hdl.handle.net/10722/157065-
dc.description.abstract3D molecular dynamics simulations were employed to investigate the influence of misfit dislocations of Ni-Al interface on glide dislocations under uniaxial loading for some specific crystallographic orientations. The simulation results show that the glide dislocations nucleated from the interface were dependent on the misfit dislocation structure at the Ni-Al interface. Square, disordered and polyline types of dislocations were observed at Al(0 0 1)/Ni(0 0 1), Al(0 0 1)/Ni(1 1 0) and Al(0 0 1)/Ni(1 1 1) interface, respectively. Moreover, under uniaxial loading, glide dislocations were induced from the line of misfit dislocations at the interface, and due to the hard-soft interface structure, glide dislocations were only observed in Al. Glide dislocations mainly occurred on {1 1 1} planes, and when these dislocation planes expanded they might collide with each other. © 2010 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/commatscien_US
dc.relation.ispartofComputational Materials Scienceen_US
dc.subjectGlide Dislocationen_US
dc.subjectInterfaceen_US
dc.subjectMisfit Dislocationen_US
dc.subjectMolecular Dynamicsen_US
dc.titleMolecular dynamics simulations of glide dislocations induced by misfit dislocations at the Ni/Al interfaceen_US
dc.typeArticleen_US
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_US
dc.identifier.authoritySoh, AK=rp00170en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.commatsci.2010.02.022en_US
dc.identifier.scopuseid_2-s2.0-77950945154en_US
dc.identifier.hkuros171045-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77950945154&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume48en_US
dc.identifier.issue3en_US
dc.identifier.spage551en_US
dc.identifier.epage555en_US
dc.identifier.isiWOS:000277932700015-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridZheng, DL=36005064400en_US
dc.identifier.scopusauthoridChen, SD=15077853600en_US
dc.identifier.scopusauthoridSoh, AK=7006795203en_US
dc.identifier.scopusauthoridMa, Y=27170420200en_US
dc.identifier.citeulike6863852-

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