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Article: Thickness dependence of electrical properties in (001) oriented lead zirconate titanate films by laser ablation

TitleThickness dependence of electrical properties in (001) oriented lead zirconate titanate films by laser ablation
Authors
KeywordsFerroelectric Properties
Pb(Zr,Ti)O 3
Pulsed Laser Deposition
Size Effect
Thin Film
Issue Date2007
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb
Citation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2007, v. 138 n. 1, p. 51-54 How to Cite?
AbstractHighly (001)-oriented Pb(Zr 0.52Ti 0.48)O3 (PZT) thin films with LaNiO3 (LNO) bottom electrodes have been fabricated on amorphous TiN buffered Si substrates by pulsed laser deposition. The polarization-electric field (P-E) hysteresis of the deposited PZT films with different thickness ranging from 25 to 850 nm was measured. Results showed that the coercive field increases with the film thickness scaling down. No P-E loops could be obtained for the film of thickness of 25 nm. The deterioration of ferroelectric property in the thinnest film was attributed to extrinsic effect other than intrinsic size effect. Current-voltage (I-V) characteristics measurement showed the increase in leakage current of the PZT films with the decrease in the thickness of the films under the same bias voltage. At a high field regime, the leakage current of the PZT films of 25 nm thickness remained unchanged with increasing applied voltage. A totally depleted back-to-back Shottky barrier model was used to explain the effect of electrode interfaces on leakage current in the PZT films. It is believed that ferroelectric/electrode interfaces play an important role in the electrical properties of ferroelectric thin films with thickness at nanometer level. © 2007 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/156879
ISSN
2015 Impact Factor: 2.331
2015 SCImago Journal Rankings: 0.723
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhu, TJen_US
dc.contributor.authorLu, Len_US
dc.contributor.authorLai, MOen_US
dc.contributor.authorSoh, AKen_US
dc.date.accessioned2012-08-08T08:44:23Z-
dc.date.available2012-08-08T08:44:23Z-
dc.date.issued2007en_US
dc.identifier.citationMaterials Science and Engineering B: Solid-State Materials for Advanced Technology, 2007, v. 138 n. 1, p. 51-54en_US
dc.identifier.issn0921-5107en_US
dc.identifier.urihttp://hdl.handle.net/10722/156879-
dc.description.abstractHighly (001)-oriented Pb(Zr 0.52Ti 0.48)O3 (PZT) thin films with LaNiO3 (LNO) bottom electrodes have been fabricated on amorphous TiN buffered Si substrates by pulsed laser deposition. The polarization-electric field (P-E) hysteresis of the deposited PZT films with different thickness ranging from 25 to 850 nm was measured. Results showed that the coercive field increases with the film thickness scaling down. No P-E loops could be obtained for the film of thickness of 25 nm. The deterioration of ferroelectric property in the thinnest film was attributed to extrinsic effect other than intrinsic size effect. Current-voltage (I-V) characteristics measurement showed the increase in leakage current of the PZT films with the decrease in the thickness of the films under the same bias voltage. At a high field regime, the leakage current of the PZT films of 25 nm thickness remained unchanged with increasing applied voltage. A totally depleted back-to-back Shottky barrier model was used to explain the effect of electrode interfaces on leakage current in the PZT films. It is believed that ferroelectric/electrode interfaces play an important role in the electrical properties of ferroelectric thin films with thickness at nanometer level. © 2007 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseben_US
dc.relation.ispartofMaterials Science and Engineering B: Solid-State Materials for Advanced Technologyen_US
dc.subjectFerroelectric Propertiesen_US
dc.subjectPb(Zr,Ti)O 3en_US
dc.subjectPulsed Laser Depositionen_US
dc.subjectSize Effecten_US
dc.subjectThin Filmen_US
dc.titleThickness dependence of electrical properties in (001) oriented lead zirconate titanate films by laser ablationen_US
dc.typeArticleen_US
dc.identifier.emailSoh, AK: aksoh@hkucc.hku.hken_US
dc.identifier.authoritySoh, AK=rp00170en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.mseb.2007.01.022en_US
dc.identifier.scopuseid_2-s2.0-33847220790en_US
dc.identifier.hkuros129023-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33847220790&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume138en_US
dc.identifier.issue1en_US
dc.identifier.spage51en_US
dc.identifier.epage54en_US
dc.identifier.isiWOS:000245322300010-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridZhu, TJ=13003112400en_US
dc.identifier.scopusauthoridLu, L=26642926300en_US
dc.identifier.scopusauthoridLai, MO=7401808640en_US
dc.identifier.scopusauthoridSoh, AK=7006795203en_US

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