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Article: Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors

TitleThermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors
Authors
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 23 How to Cite?
AbstractBy generating high resolution two dimensional temperature images of electronic devices and linking heat dissipation to electrical current, the authors demonstrate that thermoreflectance measurements employing a charge-coupled device can provide a useful and nondestructive method for profiling current density in electronic devices. Here they apply this method to high power SiGe heterojunction bipolar transistors (HBTs) integrated in a commercial SiGe bipolar complementary metal-oxide-semiconductor platform, measuring the current carried by each subcell and quantifying current collapse under high-bias operation. They show that current hogging for a HBT with two emitter subcells can lead to one subcell carrying 81% of the total current. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/156867
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChan, PKLen_US
dc.contributor.authorPipe, KPen_US
dc.contributor.authorQin, Gen_US
dc.contributor.authorMa, Zen_US
dc.date.accessioned2012-08-08T08:44:20Z-
dc.date.available2012-08-08T08:44:20Z-
dc.date.issued2006en_US
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 23en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/156867-
dc.description.abstractBy generating high resolution two dimensional temperature images of electronic devices and linking heat dissipation to electrical current, the authors demonstrate that thermoreflectance measurements employing a charge-coupled device can provide a useful and nondestructive method for profiling current density in electronic devices. Here they apply this method to high power SiGe heterojunction bipolar transistors (HBTs) integrated in a commercial SiGe bipolar complementary metal-oxide-semiconductor platform, measuring the current carried by each subcell and quantifying current collapse under high-bias operation. They show that current hogging for a HBT with two emitter subcells can lead to one subcell carrying 81% of the total current. © 2006 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleThermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistorsen_US
dc.typeArticleen_US
dc.identifier.emailChan, PKL:pklc@hku.hken_US
dc.identifier.authorityChan, PKL=rp01532en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2402947en_US
dc.identifier.scopuseid_2-s2.0-33845386043en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33845386043&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume89en_US
dc.identifier.issue23en_US
dc.identifier.isiWOS:000242709200139-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChan, PKL=35742829700en_US
dc.identifier.scopusauthoridPipe, KP=6603768450en_US
dc.identifier.scopusauthoridQin, G=15136791700en_US
dc.identifier.scopusauthoridMa, Z=7403600325en_US

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