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Article: Thermal relaxation time and heat distribution in pulsed InGaAs quantum dot lasers

TitleThermal relaxation time and heat distribution in pulsed InGaAs quantum dot lasers
Authors
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 1 How to Cite?
AbstractUsing a charge coupled device-based thermoreflectance technique, we achieve a high-resolution (∼700 nm) cross-sectional temperature profile of a semiconductor laser. This two-dimensional profile allows us to identify separate heat sources due to contact heating and nonradiative recombination in the active region. By adapting the technique to pulsed operation and varying the laser's duty cycle, we measure the thermal relaxation time constant. We also quantitatively determine the heat transfer from device-internal heat sources and demonstrate both the large effect of lateral heat spreading and the distinction between a laser's top surface temperature and its active region temperature. © 206 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/156835
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChan, PKLen_US
dc.contributor.authorPipe, KPen_US
dc.contributor.authorMi, Zen_US
dc.contributor.authorYang, Jen_US
dc.contributor.authorBhattacharya, Pen_US
dc.contributor.authorLüerßen, Den_US
dc.date.accessioned2012-08-08T08:44:10Z-
dc.date.available2012-08-08T08:44:10Z-
dc.date.issued2006en_US
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 1en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/156835-
dc.description.abstractUsing a charge coupled device-based thermoreflectance technique, we achieve a high-resolution (∼700 nm) cross-sectional temperature profile of a semiconductor laser. This two-dimensional profile allows us to identify separate heat sources due to contact heating and nonradiative recombination in the active region. By adapting the technique to pulsed operation and varying the laser's duty cycle, we measure the thermal relaxation time constant. We also quantitatively determine the heat transfer from device-internal heat sources and demonstrate both the large effect of lateral heat spreading and the distinction between a laser's top surface temperature and its active region temperature. © 206 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleThermal relaxation time and heat distribution in pulsed InGaAs quantum dot lasersen_US
dc.typeArticleen_US
dc.identifier.emailChan, PKL:pklc@hku.hken_US
dc.identifier.authorityChan, PKL=rp01532en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2219721en_US
dc.identifier.scopuseid_2-s2.0-33745799244en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33745799244&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume89en_US
dc.identifier.issue1en_US
dc.identifier.isiWOS:000238849200010-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChan, PKL=35742829700en_US
dc.identifier.scopusauthoridPipe, KP=6603768450en_US
dc.identifier.scopusauthoridMi, Z=13606588200en_US
dc.identifier.scopusauthoridYang, J=9733149000en_US
dc.identifier.scopusauthoridBhattacharya, P=7202370444en_US
dc.identifier.scopusauthoridLüerßen, D=6601964885en_US

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