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Article: High performance self-organized InGaAs quantum dot lasers on silicon

TitleHigh performance self-organized InGaAs quantum dot lasers on silicon
Authors
Issue Date2006
PublisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
Citation
Journal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2006, v. 24 n. 3, p. 1519-1522 How to Cite?
AbstractWe report the molecular beam epitaxial growth and characteristics of room temperature InGaAs quantum dot lasers grown directly on silicon utilizing thin (≤2 μm) GaAs buffer layers and quantum dot layers as dislocation filters. Cross-sectional transmission electron microscopy studies show that defect-free quantum dot active regions can be achieved. Room temperature photoluminescence emission from quantum dots grown on silicon is comparable, in intensity and linewidth, to that from similar dots grown on GaAs substrates. The best devices are characterized by relatively low threshold current (Jth ∼1100 A cm2), high output power (>150 mW), large characteristic temperature (T0 =244 K), and constant output slope efficiency (0.3 WA) in the temperature range of 5-95 °C. © 2006 American Vacuum Society.
Persistent Identifierhttp://hdl.handle.net/10722/156829
ISSN
2015 Impact Factor: 1.398
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorMi, Zen_US
dc.contributor.authorYang, Jen_US
dc.contributor.authorBhattacharya, Pen_US
dc.contributor.authorChan, PKLen_US
dc.contributor.authorPipe, KPen_US
dc.date.accessioned2012-08-08T08:44:08Z-
dc.date.available2012-08-08T08:44:08Z-
dc.date.issued2006en_US
dc.identifier.citationJournal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2006, v. 24 n. 3, p. 1519-1522en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/10722/156829-
dc.description.abstractWe report the molecular beam epitaxial growth and characteristics of room temperature InGaAs quantum dot lasers grown directly on silicon utilizing thin (≤2 μm) GaAs buffer layers and quantum dot layers as dislocation filters. Cross-sectional transmission electron microscopy studies show that defect-free quantum dot active regions can be achieved. Room temperature photoluminescence emission from quantum dots grown on silicon is comparable, in intensity and linewidth, to that from similar dots grown on GaAs substrates. The best devices are characterized by relatively low threshold current (Jth ∼1100 A cm2), high output power (>150 mW), large characteristic temperature (T0 =244 K), and constant output slope efficiency (0.3 WA) in the temperature range of 5-95 °C. © 2006 American Vacuum Society.en_US
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspxen_US
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_US
dc.titleHigh performance self-organized InGaAs quantum dot lasers on siliconen_US
dc.typeArticleen_US
dc.identifier.emailChan, PKL:pklc@hku.hken_US
dc.identifier.authorityChan, PKL=rp01532en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1116/1.2190673en_US
dc.identifier.scopuseid_2-s2.0-33744780463en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33744780463&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume24en_US
dc.identifier.issue3en_US
dc.identifier.spage1519en_US
dc.identifier.epage1522en_US
dc.identifier.isiWOS:000238790000080-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMi, Z=13606588200en_US
dc.identifier.scopusauthoridYang, J=9733149000en_US
dc.identifier.scopusauthoridBhattacharya, P=7202370444en_US
dc.identifier.scopusauthoridChan, PKL=35742829700en_US
dc.identifier.scopusauthoridPipe, KP=6603768450en_US

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