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- Publisher Website: 10.1016/j.jcrysgro.2005.07.026
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Article: Three-dimensional phase field simulation for surface roughening of heteroepitaxial films with elastic anisotropy
Title | Three-dimensional phase field simulation for surface roughening of heteroepitaxial films with elastic anisotropy |
---|---|
Authors | |
Keywords | A1. Anisotropy A1. Phase Field Method A1. Surface Morphology A3. Epitaxy |
Issue Date | 2005 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro |
Citation | Journal of Crystal Growth, 2005, v. 284 n. 1-2, p. 281-292 How to Cite? |
Abstract | The phase field methods have been employed to study the surface roughening of heteroepitaxial films with cubic elastic anisotropy in three dimensions during the annealing process. And the stress field for an arbitrarily-shaped surface has been simultaneously solved using the phase field microelasticity model. Our simulations reveal that the self-organized surface morphologies are strongly dependent on the elastic anisotropy. It is interesting to note that one can obtain favorable surface morphologies via selection of appropriate epitaxial orientations combined with tuning the strength of elastic anisotropy or modifying the asymmetric strains induced by lattice mismatches between the epitaxial materials and substrates. © 2005 Elsevier B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/156781 |
ISSN | 2023 Impact Factor: 1.7 2023 SCImago Journal Rankings: 0.379 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ni, Y | en_US |
dc.contributor.author | He, LH | en_US |
dc.contributor.author | Soh, AK | en_US |
dc.date.accessioned | 2012-08-08T08:43:57Z | - |
dc.date.available | 2012-08-08T08:43:57Z | - |
dc.date.issued | 2005 | en_US |
dc.identifier.citation | Journal of Crystal Growth, 2005, v. 284 n. 1-2, p. 281-292 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/156781 | - |
dc.description.abstract | The phase field methods have been employed to study the surface roughening of heteroepitaxial films with cubic elastic anisotropy in three dimensions during the annealing process. And the stress field for an arbitrarily-shaped surface has been simultaneously solved using the phase field microelasticity model. Our simulations reveal that the self-organized surface morphologies are strongly dependent on the elastic anisotropy. It is interesting to note that one can obtain favorable surface morphologies via selection of appropriate epitaxial orientations combined with tuning the strength of elastic anisotropy or modifying the asymmetric strains induced by lattice mismatches between the epitaxial materials and substrates. © 2005 Elsevier B.V. All rights reserved. | en_US |
dc.language | eng | en_US |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro | en_US |
dc.relation.ispartof | Journal of Crystal Growth | en_US |
dc.rights | Journal of Crystal Growth. Copyright © Elsevier BV. | - |
dc.subject | A1. Anisotropy | en_US |
dc.subject | A1. Phase Field Method | en_US |
dc.subject | A1. Surface Morphology | en_US |
dc.subject | A3. Epitaxy | en_US |
dc.title | Three-dimensional phase field simulation for surface roughening of heteroepitaxial films with elastic anisotropy | en_US |
dc.type | Article | en_US |
dc.identifier.email | Soh, AK: aksoh@hkucc.hku.hk | en_US |
dc.identifier.authority | Soh, AK=rp00170 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/j.jcrysgro.2005.07.026 | en_US |
dc.identifier.scopus | eid_2-s2.0-25144454075 | en_US |
dc.identifier.hkuros | 116604 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-25144454075&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 284 | en_US |
dc.identifier.issue | 1-2 | en_US |
dc.identifier.spage | 281 | en_US |
dc.identifier.epage | 292 | en_US |
dc.identifier.isi | WOS:000232387900038 | - |
dc.publisher.place | Netherlands | en_US |
dc.identifier.scopusauthorid | Ni, Y=16836857400 | en_US |
dc.identifier.scopusauthorid | He, LH=7403374517 | en_US |
dc.identifier.scopusauthorid | Soh, AK=7006795203 | en_US |
dc.identifier.citeulike | 325843 | - |
dc.identifier.issnl | 0022-0248 | - |