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- Publisher Website: 10.1016/S0040-6090(03)00921-0
- Scopus: eid_2-s2.0-0042420868
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Article: Temperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5 < x < 1
Title | Temperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5 < x < 1 |
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Authors | |
Keywords | Alloys Electrical Properties And Measurements Resistivity Sputtering |
Issue Date | 2003 |
Publisher | Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf |
Citation | Thin Solid Films, 2003, v. 441 n. 1-2, p. 298-306 How to Cite? |
Abstract | By investigating the thermal variations of electrical resistance of a range of NixAl1-x sputter-deposited films, where x = 0.5-1, it was found that a thermally-activated transition from the insulator to metal state on increasing temperature occurred only within a narrow range of x from 0.75 to 0.8. At all other values of x investigated, the conduction behavior of the films appeared to be metallic as expected. The same observations were made on two different sputtering systems with different deposition conditions, indicating that the electrical transition from x = 0.75 to 0.8 is a highly reproducible phenomenon. © 2003 Elsevier B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/156680 |
ISSN | 2023 Impact Factor: 2.0 2023 SCImago Journal Rankings: 0.400 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Anand, TJS | en_US |
dc.contributor.author | Ng, HP | en_US |
dc.contributor.author | Ngan, AHW | en_US |
dc.contributor.author | Meng, XK | en_US |
dc.date.accessioned | 2012-08-08T08:43:30Z | - |
dc.date.available | 2012-08-08T08:43:30Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.citation | Thin Solid Films, 2003, v. 441 n. 1-2, p. 298-306 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/156680 | - |
dc.description.abstract | By investigating the thermal variations of electrical resistance of a range of NixAl1-x sputter-deposited films, where x = 0.5-1, it was found that a thermally-activated transition from the insulator to metal state on increasing temperature occurred only within a narrow range of x from 0.75 to 0.8. At all other values of x investigated, the conduction behavior of the films appeared to be metallic as expected. The same observations were made on two different sputtering systems with different deposition conditions, indicating that the electrical transition from x = 0.75 to 0.8 is a highly reproducible phenomenon. © 2003 Elsevier B.V. All rights reserved. | en_US |
dc.language | eng | en_US |
dc.publisher | Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf | en_US |
dc.relation.ispartof | Thin Solid Films | en_US |
dc.subject | Alloys | en_US |
dc.subject | Electrical Properties And Measurements | en_US |
dc.subject | Resistivity | en_US |
dc.subject | Sputtering | en_US |
dc.title | Temperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5 < x < 1 | en_US |
dc.type | Article | en_US |
dc.identifier.email | Ngan, AHW:hwngan@hkucc.hku.hk | en_US |
dc.identifier.authority | Ngan, AHW=rp00225 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/S0040-6090(03)00921-0 | en_US |
dc.identifier.scopus | eid_2-s2.0-0042420868 | en_US |
dc.identifier.hkuros | 88714 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0042420868&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 441 | en_US |
dc.identifier.issue | 1-2 | en_US |
dc.identifier.spage | 298 | en_US |
dc.identifier.epage | 306 | en_US |
dc.identifier.isi | WOS:000185165600046 | - |
dc.publisher.place | Switzerland | en_US |
dc.identifier.scopusauthorid | Anand, TJS=23491253200 | en_US |
dc.identifier.scopusauthorid | Ng, HP=7401619209 | en_US |
dc.identifier.scopusauthorid | Ngan, AHW=7006827202 | en_US |
dc.identifier.scopusauthorid | Meng, XK=7401630110 | en_US |
dc.identifier.issnl | 0040-6090 | - |