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Article: High-temperature Fatigue of a Gas-Pressure-Sintered Silicon Nitride

TitleHigh-temperature Fatigue of a Gas-Pressure-Sintered Silicon Nitride
Authors
Issue Date1996
PublisherElsevier Ltd. The Journal's web site is located at http://www.elsevier.com/locate/jeurceramsoc
Citation
Journal Of The European Ceramic Society, 1996, v. 16 n. 9, p. 1009-1020 How to Cite?
AbstractThe fatigue behaviour of a gas-pressure-sintered silicon nitride has been investigated at 1000°C. The growth of long (>100 μm) subcritical fatigue cracks was observed directly and the time to failure of uniaxially loaded specimens caused by the growth small (<100 μm), machining flaws was measured. Oxidation in the crack-tip region reduced the fatigue resistance of the material. Cracks grew under the co-operative effect of stress, oxidation and flow of the viscous oxide phase formed. This mechanism would explain why crack growth rates were greater under static loading than cyclic loading because of the more damaging effect of sustained crack opening. Because of the relatively small size of the oxidized crack-tip region and its slow advancement, the high temperature fast fracture behaviour was similar to that at room temperature and a similar value of KIC was estimated. © 1996 Elsevier Science Limited.
Persistent Identifierhttp://hdl.handle.net/10722/156678
ISSN
2015 Impact Factor: 2.933
2015 SCImago Journal Rankings: 1.177
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, Men_US
dc.contributor.authorLi, Men_US
dc.contributor.authorBushby, AJen_US
dc.contributor.authorGuiu, Fen_US
dc.contributor.authorReece, MJen_US
dc.contributor.authorSammur, MFRen_US
dc.date.accessioned2012-08-08T08:43:29Z-
dc.date.available2012-08-08T08:43:29Z-
dc.date.issued1996en_US
dc.identifier.citationJournal Of The European Ceramic Society, 1996, v. 16 n. 9, p. 1009-1020en_US
dc.identifier.issn0955-2219en_US
dc.identifier.urihttp://hdl.handle.net/10722/156678-
dc.description.abstractThe fatigue behaviour of a gas-pressure-sintered silicon nitride has been investigated at 1000°C. The growth of long (>100 μm) subcritical fatigue cracks was observed directly and the time to failure of uniaxially loaded specimens caused by the growth small (<100 μm), machining flaws was measured. Oxidation in the crack-tip region reduced the fatigue resistance of the material. Cracks grew under the co-operative effect of stress, oxidation and flow of the viscous oxide phase formed. This mechanism would explain why crack growth rates were greater under static loading than cyclic loading because of the more damaging effect of sustained crack opening. Because of the relatively small size of the oxidized crack-tip region and its slow advancement, the high temperature fast fracture behaviour was similar to that at room temperature and a similar value of KIC was estimated. © 1996 Elsevier Science Limited.en_US
dc.languageengen_US
dc.publisherElsevier Ltd. The Journal's web site is located at http://www.elsevier.com/locate/jeurceramsocen_US
dc.relation.ispartofJournal of the European Ceramic Societyen_US
dc.titleHigh-temperature Fatigue of a Gas-Pressure-Sintered Silicon Nitrideen_US
dc.typeArticleen_US
dc.identifier.emailWang, M:memwang@hku.hken_US
dc.identifier.authorityWang, M=rp00185en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0955-2219(96)00020-9en_US
dc.identifier.scopuseid_2-s2.0-0041539153en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0041539153&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume16en_US
dc.identifier.issue9en_US
dc.identifier.spage1009en_US
dc.identifier.epage1020en_US
dc.identifier.isiWOS:A1996VD87600012-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridWang, M=15749714100en_US
dc.identifier.scopusauthoridLi, M=36066390600en_US
dc.identifier.scopusauthoridBushby, AJ=6701663639en_US
dc.identifier.scopusauthoridGuiu, F=7003298633en_US
dc.identifier.scopusauthoridReece, MJ=7006407343en_US
dc.identifier.scopusauthoridSammur, MFR=6507668129en_US

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