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Article: Oxygen-stoichiometry-dependent microstructural and magnetic properties of CoPt thin films capped with ion-beam-assisted deposited TiOx layers

TitleOxygen-stoichiometry-dependent microstructural and magnetic properties of CoPt thin films capped with ion-beam-assisted deposited TiOx layers
Authors
KeywordsCoPt
Ion-beam assisted deposition
Magnetic thin films
Issue Date2013
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/surfcoat
Citation
Surface and Coatings Technology, 2013, v. 228 n. SUPPL.1, p. S354-S359 How to Cite?
AbstractThe magnetic properties of CoPt with different percentages of oxygen in the TiO x capping layer were investigated through annealing processes. Results have shown that after annealing, the structural phase transformation from fcc to fct CoPt occurred and was confirmed by the enhanced coercivities. In addition, the isolated CoPt grains separated by grain boundary TiO x in the annealed CoPt/TiO x (30% O 2/Ar) thin films exhibited the largest coercivity. The excess amount of oxygen in the TiO x layer may react with Co and Pt to form oxides (as characterized by XPS) and result in the drop of coercivity. Thus the growth of the fct CoPt phase can be enhanced by optimizing the oxygen ratio during fabrication of the TiO x layer and post annealing, which may find useful applications for future CoPt-based magnetic recording. © 2012 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155770
ISSN
2015 Impact Factor: 2.139
2015 SCImago Journal Rankings: 0.872
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, Gen_US
dc.contributor.authorLeung, CWen_US
dc.contributor.authorShueh, Cen_US
dc.contributor.authorWu, YJen_US
dc.contributor.authorLin, KWen_US
dc.contributor.authorSun, ACen_US
dc.contributor.authorHsu, JHen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorPong, PWTen_US
dc.date.accessioned2012-08-08T08:35:16Z-
dc.date.available2012-08-08T08:35:16Z-
dc.date.issued2013en_US
dc.identifier.citationSurface and Coatings Technology, 2013, v. 228 n. SUPPL.1, p. S354-S359en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://hdl.handle.net/10722/155770-
dc.description.abstractThe magnetic properties of CoPt with different percentages of oxygen in the TiO x capping layer were investigated through annealing processes. Results have shown that after annealing, the structural phase transformation from fcc to fct CoPt occurred and was confirmed by the enhanced coercivities. In addition, the isolated CoPt grains separated by grain boundary TiO x in the annealed CoPt/TiO x (30% O 2/Ar) thin films exhibited the largest coercivity. The excess amount of oxygen in the TiO x layer may react with Co and Pt to form oxides (as characterized by XPS) and result in the drop of coercivity. Thus the growth of the fct CoPt phase can be enhanced by optimizing the oxygen ratio during fabrication of the TiO x layer and post annealing, which may find useful applications for future CoPt-based magnetic recording. © 2012 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/surfcoaten_US
dc.relation.ispartofSurface and Coatings Technologyen_US
dc.subjectCoPten_US
dc.subjectIon-beam assisted depositionen_US
dc.subjectMagnetic thin filmsen_US
dc.titleOxygen-stoichiometry-dependent microstructural and magnetic properties of CoPt thin films capped with ion-beam-assisted deposited TiOx layersen_US
dc.typeArticleen_US
dc.identifier.emailLin, KW: kwlin@dragon.nchu.edu.twen_US
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailPong, PWT: ppong@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.surfcoat.2012.05.103en_US
dc.identifier.scopuseid_2-s2.0-84879797863en_US
dc.identifier.hkuros207619-
dc.identifier.hkuros227865-
dc.identifier.isiWOS:000323628400076-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridPong, PWT=24071267900en_US
dc.identifier.scopusauthoridLai, PT=55224724400en_US
dc.identifier.scopusauthoridHsu, JH=55236937600en_US
dc.identifier.scopusauthoridSun, AC=55236319800en_US
dc.identifier.scopusauthoridLin, KW=7403967959en_US
dc.identifier.scopusauthoridWu, YJ=36988985200en_US
dc.identifier.scopusauthoridShueh, C=55179308500en_US
dc.identifier.scopusauthoridLeung, CW=55192281000en_US
dc.identifier.scopusauthoridLi, G=37002991600en_US
dc.identifier.citeulike10732607-

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